28F016SV Datasheet PDF - Intel
Part Number | 28F016SV | |
Description | 16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY | |
Manufacturers | Intel | |
Logo | ||
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28F016SV
16-MBIT (1 MBIT x 16, 2 MBIT x 8)
FlashFile™ MEMORY
Includes Commercial and Extended Temperature Specifications
n SmartVoltage Technology
User-Selectable 3.3V or 5V VCC
User-Selectable 5V or 12V VPP
n 65 ns Access Time
n 1 Million Erase Cycles per Block
n 30.8 MB/sec Burst Write Transfer Rate
n 0.48 MB/sec Sustainable Write Transfer
Rate
n Configurable x8 or x16 Operation
n 56-Lead TSOP and SSOP Type I
Packages
n Backwards-Compatible with 28F016SA,
28F008SA Command Set
n Revolutionary Architecture
Multiple Command Execution
Program during Erase
Command Super-Set of the Intel
28F008SA
Page Buffer Program
n 2 µA Typical Deep Power-Down
n 32 Independently Lockable Blocks
n State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’s 28F016SV 16-Mbit FlashFile™ memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the
28F016SV enables the design of truly mobile, high-performance personal computing and communications
products.
The 28F016SV is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit and
28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage
technology), fast program and read performance and selective block locking, provide a highly-flexible memory
component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.
The 28F016SV’s dual read voltage enables the design of memory cards which can be read/written in 3.3V
and 5V systems interchangeably. Its x8/x16 architecture allows optimization of the memory-to-processor
interface. The flexible block locking option enables bundling of executable application software in a Resident
Flash Array or memory card. The 28F016SV is manufactured on Intel’s 0.6 µm ETOX IV process technology.
July 1997
Order Number: 290528-007
7/11/97 11:03 AM 29052807.DOC
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28F016SV FlashFile™ MEMORY
Number
-004
-005
-006
-007
REVISION HISTORY (Continued)
Description
Added 3/5# pin to Block Diagram (Figure 1), Pinout Configurations (Figures 2 and 3),
Product Overview (Section 1.1) and Lead Descriptions (Section 2.1)
Added 3/5# pin to Test Conditions of ICCS Specifications
Added 3/5# pin (Y) to Timing Nomenclature (Section 5.5)
Increased tPHQV Specifications at 5V VCC to 400 ns for E28F016SV 065 devices
and 480 ns for E28F106SV 070 devices.
Modified Power-Up and Reset Timings (Section 5.9) to include 3/5# pin: Removed t5VPH
and t3VPH specifications; Added tPLYL, tPLYH, tYLPH, and tYHPH specifications
Added tPHEL3 and tPHEL5 specifications to Power-Up and Reset Timings (Section 5.9)
Corrected TSOP Mechanical Specification A1 from 0.50 mm to 0.050 mm (Section 6.0)
Corrected SSOP Mechanical Spec. B (max) from 0.20 mm to 0.40 mm (Section 6.0)
Minor cosmetic changes throughout document.
Updated DC Specifications: ICCD, IPPES
Updated AC Specifications: Page Buffer Reads: (tAVAV, tAVQV, tELQV, and tFLQV/tFHQV)
Page Buffer WE#-Controlled Command Writes (tELWL)
CE#-Controlled Command Write Parameters (tAVAV, tELEH, tEHEL)
Combined Commercial and Extended Temperature information into single datasheet.
Updated AC Specifications: Page Buffer Reads: (tAVAV, tAVQV, tELQV, and tFLQV/tFHQV)
Updated Disclaimer
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 28F016SV electronic component. |
Information | Total 30 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 28F016SV.PDF Datasheet ] |
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