NE5500179A Datasheet PDF - NEC
| Part Number | NE5500179A | |
| Description | SILICON POWER MOS FET | |
| Manufacturers | NEC | |
| Logo |  |
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DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET
FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier
for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s
0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0
dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27
dBm output power with 50% pozwer added efficiency at 3.5 V, respectively.
FEATURES
• High output power
: Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High power added efficiency : ηadd = 55% TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 20 dBm)
• High linear gain
: GL = 14.0 dB TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = 10 dBm)
• Surface mount package
: 5.7 × 5.7 × 1.1 mm MAX.
• Single supply
: VDS = 3.0 to 6.0 V
APPLICATIONS
• Digital cellular phones : 4.8 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage
amplifier
• Digital cordless phones : 3.5 V final stage amplifier for DECT
• Others
: General purpose amplifiers for 1.6 to 2.5 GHz TDMA applications
ORDERING INFORMATION
Part Number
NE5500179A-T1
Package
79A
Marking
R1
Supplying Form
• 12 mm wide embossed taping
• Gate pin face the perforation side of the tape
• Qty 1 kpcs/reel
Remark To order evaluation samples, consult your NEC sales representative.
Part number for sample order: NE5500179A
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10118EJ01V1DS (1st edition)
(Previous No. P15190EJ1V0DS00)
Date Published April 2002 CP(K)
Printed in Japan
The mark ! shows major revised points.
NEC Corporation 1999
NEC Compound Semiconductor Devices 2002
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OUTPUT POWER, DRAIN CURRENT
vs. GATE TO SOURCE VOLTAGE
30
Pout
600
25 500
20 400
15 300
10 200
ID
5
VDS = 4.5 V
f = 460 MHz
Pin = 15 dBm
100
0
0 1.0 2.0 3.0 4.0
Gate to Source Voltage VGS (V)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
30
VDS = 3.5 V
IDset = 100 mA
25 f = 850 MHz
Pout
500
400
20 300
15 200
ID
10 100
50
–5 0 5 10 15 20 25
Input Power Pin (dBm)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
30
VDS = 3.0 V
IDset = 100 mA
f = 2.45 GHz
25
500
Pout
400
20 300
ID
15 200
10 100
50
0 5 10 15 20 25 30
Input Power Pin (dBm)
NE5500179A
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
100
VDS = 4.5 V
f = 460 GHz
Pin = 15 dBm
ηd
η add
50
0 1.0 2.0 3.0 4.0
Gate to Source Voltage VGS (V)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
100
VDS = 3.5 V
IDset = 100 mA
f = 850 MHz
ηd
50
η add
0
–5 0 5 10 15 20 25
Input Power Pin (dBm)
DRAIN EFFICIENCY, POWER ADDED
EFFICIENCY vs. INPUT POWER
100
VDS = 3.0 V
IDset = 100 mA
f = 2.45 GHz
ηd
50
η add
0 5 10 15 20 25 30
Input Power Pin (dBm)
Data Sheet PU10118EJ01V1DS
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NE5500179A electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ NE5500179A.PDF Datasheet ] | |
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