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Datasheet PN3565 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | PN3565 | NPN General Purpose Amplifier PN3565
Discrete POWER & Signal Technologies
PN3565
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symb | Fairchild Semiconductor | amplifier |
2 | PN3565 | PNP SILICON TRANSISTOR | Micro Electronics | transistor |
3 | PN3565 | Small Signal Transistors Small Signal Transistors TO-92 Case (Continued)
TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO ICBO @ VCB (nA) (V) MIN 40 50 60 80 100 300 500 400 60 80 20 30 30 30 30 -40 50 60 300 500 --30 30 140 100 30 75 40 60 60 30 30 30 40 80 80 80 25 6.0 12 (V) *VCES MIN 40* 50* 50* 80* 100 300 400 350 60 80 20* 30 | Central Semiconductor Corp | transistor |
4 | PN3565 | Trans GP BJT NPN 25V 0.05A 3-Pin TO-92 Tape and Box | New Jersey Semiconductor | data |
PN3 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | PN300 | Silicon PIN Photodiodes PIN Photodiodes
PNZ0300, PNZ300F
Silicon PIN Photodiodes
PNZ0300
ø4.6±0.15 Glass lens
Unit : mm
For optical control systems Features
Fast response which is well suited to high speed modulated light detection Wide spectral sensitivity Low dark current and low noise Good photo current linearity a Panasonic Semiconductor diode | | |
2 | PN300F | Silicon PIN Photodiodes PIN Photodiodes
PNZ0300, PNZ300F
Silicon PIN Photodiodes
PNZ0300
ø4.6±0.15 Glass lens
Unit : mm
For optical control systems Features
Fast response which is well suited to high speed modulated light detection Wide spectral sensitivity Low dark current and low noise Good photo current linearity a Panasonic Semiconductor diode | | |
3 | PN304V | SI PIN QUAD PHOTODIODE Panasonic Semiconductor diode | | |
4 | PN3053 | COMPLEMENTARY SILICON TRANSISTORS Micro Electronics transistor | | |
5 | PN3316 | SMD Power Inductors Unshielded
PN0805 , PN3316 & PN5022
SMD Power Inductors Unshielded
C/Severo Ochoa 33 – Parque Tecnológico de Andalucía. 29590 Campanillas .Málaga (Spain) Phone +34 951 231 320 Fax +34 951 231 321 E-mail: [email protected] Web http://www.grupopremo.com
1. Configuration & Premo inductor | | |
6 | PN334 | PIN Photodiode PIN Photodiodes
PNZ334 (PN334)
PIN Photodiode
For optical fiber communication systems
5.0±0.2 3.0±0.3
ø4.8±0.2 ø4.4±0.2 C0.2
Features
Plastic type package (ø 5) High coupling capability suitable for plastic fiber High quantum efficiency High-speed response
0.5
0.8
0.6
26.0±0.1 1.5 1.5
Panasonic Semiconductor diode | | |
7 | PN3439 | NPN high-voltage transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN3439; PN3440 NPN high-voltage transistors
Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1997 Sep 04
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES � Philips transistor | |
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Número de pieza | Descripción | Fabricantes | |
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