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What is MMSF3P02HD?

This electronic component, produced by the manufacturer "Motorola Semiconductors", performs the same function as "SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS".


MMSF3P02HD Datasheet PDF - Motorola Semiconductors

Part Number MMSF3P02HD
Description SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
Manufacturers Motorola Semiconductors 
Logo Motorola Semiconductors Logo 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF3P02HD/D
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Single P-Channel
MMSF3P02HD
Motorola Preferred Device
Field Effect Transistors
MiniMOSdevices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
G
D
S
SINGLE TMOS
POWER MOSFET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.075 OHM
CASE 751–05, Style 13
SO–8
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
N–C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation @ TA = 25°C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 14 mH, RG = 25 )
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
20
20
± 20
5.6
3.6
30
2.5
– 55 to 150
567
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
RθJA
TL
50 °C/W
260 °C
DEVICE MARKING
S3P02
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF3P02HDR2
13
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
1

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MMSF3P02HD equivalent
12 24
QT
10 20
VGS
8 16
6
Q1
4
Q2
ID = 3 A
TJ = 25°C
12
8
24
Q3 VDS
00
0 4 8 12 16 20 24 28 32 36
QT, TOTAL CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1000
VDD = 10 V
ID = 3 A
VGS = 10 V
TJ = 25°C
td(off)
100
tf
tr
MMSF3P02HD
td(on)
10
1 10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
3
VGS = 0 V
2.5 TJ = 25°C
2
1.5
1
0.5
0
0.3 0.4
0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
1.4
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data
5


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MMSF3P02HDThe function is SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS. Motorola SemiconductorsMotorola Semiconductors
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