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PDF MMSF10N03Z Data sheet ( Hoja de datos )
| Número de pieza | MMSF10N03Z | |
| Descripción | SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N03Z/D
Advance Information
Medium Power Surface Mount Products
TMOS Single N-Channel with
MMSF10N03Z
Motorola Preferred Device
Monolithic Zener ESD Protected Gate
EZFETs™ are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.
• Zener Protected Gates Provide Electrostatic Discharge Protection
• Designed to Withstand 200 V Machine Model and 2000 V Human Body Model D
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
G
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
™
S
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 13 mW
CASE 751–05, Style 12
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
Symbol
Max
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor @ TA = 25°C (1)
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor @ TA = 25°C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
W(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 )
THERMAL RESISTANCE
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
30
30
± 20
10
7.7
50
2.5
20
1.6
12
– 55 to 150
1000
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
mJ
Junction–to–Ambient (1)
Junction–to–Ambient (2)
Parameter
Symbol
RqJA
(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
Typ
—
—
Max Unit
50 °C/W
80
S10N3Z
Device
MMSF10N03ZR2
Reel Size
13″
Tape Width
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Quantity
2500 units
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1
1 page  
12
10
VDS
8.0
QT
18
15
VGS 12
6.0 9.0
Q1 Q2
4.0 6.0
TJ = 25°C
2.0
ID = 2.0 A
3.0
Q3
00
0 5.0 10 15 20 25 30 35 40 45 50
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
10,000
1000
VGS = 10 V
VDD = 25 V
ID = 1.0 A
TJ = 25°C
td(off)
tf
MMSF10N03Z
100
10
1.0
tr
td(on)
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
10
9.0 TJ = 25°C
8.0 VGS = 0 V
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.4
0.5 0.6 0.7
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.8
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data
5
5 Page | ||
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| PDF Descargar | [ Datasheet MMSF10N03Z.PDF ] | |
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