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What is MMBT2907?

This electronic component, produced by the manufacturer "Comchip Technology", performs the same function as "General Purpose Transistor (PNP)".


MMBT2907 Datasheet PDF - Comchip Technology

Part Number MMBT2907
Description General Purpose Transistor (PNP)
Manufacturers Comchip Technology 
Logo Comchip Technology Logo 


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General Purpose Transistor (PNP)
MMBT2907A
COMCHIP
www.comchiptech.com
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Ideal for Medium Power Amplification and Switching
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
COLLECTOR
3
1
BASE
2
EMITTER
12
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
2907
2907A
–40 –60
–60
–5.0
–600
Unit
Vdc
Vdc
Vdc
mAdc
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MDS030300B1
Page 1

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MMBT2907 equivalent
General Purpose Transistor (PNP)
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10 10
f = 1.0 kHz
8.0 8.0
COMCHIP
www.comchiptech.com
6.0 IC = –1.0 mA, Rs = 430
–500 µA, Rs = 560
–50 µA, Rs = 2.7 k
4.0 –100 µA, Rs = 1.6 k
6.0
4.0
2.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, Frequency (kHz)
50 100
Figure 7. Frequency Effects
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k
Rs, Source Resistance (OHMS)
Figure 8. Source Resistance Effects
50 k
30
20 Ceb
10
7.0
5.0 Ccb
3.0
2.0
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30
Reverse Voltage (VOLTS)
Figure 9. Capacitances
400
300
200
100
80 VCE = –20 V
60 TJ = 25°C
40
30
20
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200
IC, Collector Current (mA)
–500 –1000
Figure 10. Current–Gain — Bandwidth Product
–1.0
TJ = 25°C
–0.8
–0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, Collector Current (mA)
Figure 11. “On” Voltage
MDS030300B1
+0.5
0
RqVC for VCE(sat)
–0.5
–1.0
–1.5
–2.0 RqVB for VBE
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, Collector Current (mA)
Figure 12. Temperature Coefficients
Page 5


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