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PDF MMBT2222A Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222A | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild | |
| Logotipo |  |
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 1. NPN Planar Transistor - Cystek  Hay una vista previa y un enlace de descarga de MMBT2222A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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July 2014
MMBT2222A / PZT2222A
NPN General-Purpose Amplifier
Features
• This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA.
• Sourced from process 19.
C
E
SOT-23
Mark:1P
B
Figure 1. MMBT2222A Device Package
C
SOT-223
E
C
B
Figure 2. PZT2222A Device Package
Ordering Information
Part Number
MMBT2222A
PZT2222A
Top Mark
1P
2222A
Package
SOT-23 3L
SOT-223 4L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Value
40
75
6.0
1.0
-55 to 150
Unit
V
V
V
A
°C
Note:
1. These rating are based on a maximum junction temperature of 150 °C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation.
© 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
400
IB1= IB2=
Ic
10
320
V cc = 25 V
240
160
80
0
10
t off
t on
100
I CIC - COLLECTOR CURRENT (mA)
1000
Figure 9. Turn-On and Turn-Off Times
vs. Collector Current
400
IB1= IB2=
Ic
10
320
V cc = 25 V
240
160
80
0
10
ts
tr
tf
td
100
I CIC - COLLECTOR CURRENT (mA)
1000
Figure 10. Switching Times vs. Collector Current
1
0.75 TO-92
0.5
SOT-23
0.25
SOT-223
0
0 25 50 75 100 125 150
TEMPERATURE (oC)
Figure 11. Power Dissipation vs.
Ambient Temperature
8
VCE = 10 V
T A = 25oC
6
4
h oe
h re
2
h fe
h ie
0
0 10 20 30 40 50
I C - COLLECTOR CURRENT (mA)
60
Figure 12. Common Emitter Characteristics
2.4
VCE = 10 V
2 I C = 10 mA
1.6
1.2
hre h ie
h fe
hoe
0.8
0.4
0
0 20 40 60 80 100
T A - AMBIENT TEMPERATURE (o C)
Figure 13. Common Emitter Characteristics
1.3
1.25
1.2
1.15
1.1
1.05
1
0.95
0.9
0.85
0.8
0.75
0
I C = 10 mA
T A = 25oC
h fe
h ie
h re
h oe
5 10 15 20 25 30
VCE - COLLECTOR VOLTAGE (V)
35
Figure 14. Common Emitter Characteristics
© 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222A.PDF ] | |
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