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What is MJE13007?

This electronic component, produced by the manufacturer "Motorola Semiconductors", performs the same function as "POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS".


MJE13007 Datasheet PDF - Motorola Semiconductors

Part Number MJE13007
Description POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS
Manufacturers Motorola Semiconductors 
Logo Motorola Semiconductors Logo 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13007/D
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF13007 is designed for high–voltage, high–speed power switching
inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
VCEO(sus) 400 V
Reverse Bias SOA with Inductive Loads @ TC = 100°C
700 V Blocking Capability
SOA and Switching Applications Information
Two Package Choices: Standard TO–220 or Isolated TO–220
MJF13007 is UL Recognized to 3500 VRMS, File #E69369
MJE13007
MJF13007
POWER TRANSISTOR
8.0 AMPERES
400 VOLTS
80/40 WATTS
MAXIMUM RATINGS
Rating
Symbol MJE13007 MJF13007 Unit
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Base Current — Peak (1)
Emitter Current — Continuous
Emitter Current — Peak (1)
RMS Isolation Voltage
(for 1 sec, R.H. < 30%, TA = 25°C)
Test No. 1 Per Fig. 15
Test No. 2 Per Fig. 16
Test No. 3 Per Fig. 17
Proper strike and creepage distance must
be provided
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
VISOL
400
700
9.0
8.0
16
4.0
8.0
12
24
— 4500
— 3500
— 1500
Vdc
Vdc
Vdc
Adc
Adc
Adc
V
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 80
40* Watts
0.64 0.32 W/°C
Operating and Storage Temperature
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
RθJC
RθJA
°1.56°
°62.5°
°3.12°
°62.5°
°C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8from Case for 5 Seconds
TL
260 °C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
*Measurement made with thermocouple contacting the bottom insulated mountign surface of the
*package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied
*at a mounting torque of 6 to 8lbs.
CASE 221A–06
TO–220AB
MJE13007
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF13007
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1

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MJE13007 equivalent
MJE13007 MJF13007
1
D = 0.5
0.5
0.3 D = 0.2
0.2
D = 0.1
0.1
0.05 D = 0.05
0.03 SINGLE PULSE
0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
RθJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.01
0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1K 2K 3K 5K 10K 20K 30K 50K 100K
t, TIME (msec)
Figure 10. Typical Thermal Response for MJF13007
SPECIFICATION INFORMATION FOR SWITCHMODE APPLICATIONS
INTRODUCTION
The primary considerations when selecting a power
transistor for SWITCHMODE applications are voltage and
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be
discussed and related to the circuit examples illustrated in
Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are important
in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that
require high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than VCC after the device is completely off (see load
line diagrams at IC = Ileakage 0 in Table 2). The blocking
capability at this point depends on the base to emitter
conditions and the device junction temperature. Since the
highest device capability occurs when the base to emitter
junction is reverse biased (VCEV), this is the recommended
and specified use condition. Maximum ICEV at rated VCEV is
specified at a relatively low reverse bias (1.5 Volts) both at
25°C and 100°C. Increasing the reverse bias will give some
improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn–on and turn–off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn–on
and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
For inductive loads, high voltage and current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as a Reverse Bias Safe Operating Area
(Figure 7) which represents voltage–current conditions that
can be sustained during reverse biased turn–off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see
(1) Motorola Application Note AN719, AN873, AN875, AN951.
Motorola Bipolar Power Transistor Device Data
5


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