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What is 74LVC2G38?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "Dual 2-input NAND gate".


74LVC2G38 Datasheet PDF - NXP Semiconductors

Part Number 74LVC2G38
Description Dual 2-input NAND gate
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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74LVC2G38
Dual 2-input NAND gate; open drain
Rev. 11 — 8 April 2013
Product data sheet
1. General description
The 74LVC2G38 provides a 2-input NAND function.
The outputs of the 74LVC2G38 devices are open-drain and can be connected to other
open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND
functions.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these
devices as translators in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM EIA/JESD22-A114F exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Open-drain outputs
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C

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74LVC2G38 equivalent
NXP Semiconductors
74LVC2G38
Dual 2-input NAND gate; open drain
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Max Unit
VCC supply voltage
VI input voltage
VO output voltage
Active mode
Power-down mode
0.5
[1] 0.5
[1][2] 0.5
[1][2] 0.5
+6.5
+6.5
+6.5
+6.5
V
V
V
V
IIK
IOK
IO
ICC
IGND
Tstg
Ptot
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
VI < 0 V
VO > VCC or VO < 0 V
VO = 0 V to VCC
Tamb = 40 C to +125 C
50
-
-
-
100
65
[3] -
-
50
50
100
-
+150
300
mA
mA
mA
mA
mA
C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For TSSOP8 package: above 55 C the value of Ptot derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110 C the value of Ptot derates linearly with 8 mW/K.
For XSON8 and XQFN8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
VI
VO
Operating conditions
Parameter
supply voltage
input voltage
output voltage
Tamb
t/V
ambient temperature
input transition rise and fall rate
Conditions
Active mode
disable mode
Power-down mode
VCC = 1.65 V to 2.7 V
VCC = 2.7 V to 5.5 V
Min Max Unit
1.65 5.5
V
0 5.5 V
0
VCC
V
0 5.5 V
0 5.5 V
40
+125
C
- 20 ns/V
- 10 ns/V
74LVC2G38
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 8 April 2013
© NXP B.V. 2013. All rights reserved.
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