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Número de pieza | MCR72 | |
Descripción | Silicon Controlled Rectifiers | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
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No Preview Available ! MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR72/D
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed for industrial and consumer applications such as temperature, light and
speed control; process and remote controls; warning systems; capacitive discharge
circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and
Stability
• Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits
MCR72
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
AC
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = – 40 to 110°C,
1/2 Sine Wave, RGK = 1kΩ)
MCR72-2
MCR72-3
MCR72-4
MCR72-6
MCR72-8
MCR72-10
Symbol
VDRM
or
VRRM
Value
50
100
200
400
600
800
Unit
Volts
On-State RMS Current (TC = 83°C)
IT(RMS)
8
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to 110°C)
ITSM
100
Circuit Fusing (t = 8.3 ms)
pPeak Gate Voltage (t 10 µs)
pPeak Gate Current (t 10 µs)
pPeak Gate Power (t 10 µs)
I2t
VGM
IGM
PGM
40
±5
1
5
Average Gate Power
PG(AV)
0.75
Operating Junction Temperature Range
TJ –40 to +110
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Amps
Amps
A2s
Volts
Amp
Watts
Watts
°C
(cont.)
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MCR72.PDF ] |
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