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Número de pieza | HYB5118160BSJ-50 | |
Descripción | 1M x 16-Bit Dynamic RAM | |
Fabricantes | Siemens | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HYB5118160BSJ-50 (archivo pdf) en la parte inferior de esta página. Total 24 Páginas | ||
No Preview Available ! 1M x 16-Bit Dynamic RAM
(1k-Refresh)
HYB5118160BSJ-50/-60/-70
Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
• Performance:
tRAC
tCAC
tAA
tRC
tPC
RAS access time
CAS access time
Access time from address
Read/Write cycle time
Fast page mode cycle time
-50 -60 -70
50 60 70 ns
13 15 20 ns
25 30 35 ns
90 110 130 ns
35 40 45 ns
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 1100 active mW (-50 version)
max. 990 active mW (-60 version)
max. 880 active mW (-70 version)
11 mW standby (TTL)
5.5. mW standby (MOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh,
self refresh
• Fast page mode capability
• 2 CAS / 1 WE
• All inputs, outputs and clocks fully TTL-compatible
• 1024 refresh cycles / 16 ms
• Plastic Package:
P-SOJ-42-1 400 mil
Semiconductor Group
1
1.96
1 page HYB 5118160BSJ-50/-60/-70
1M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
min.
max.
Input high voltage
Input low voltage
Output high voltage (IOUT = – 5 mA)
Output low voltage (IOUT = 4.2 mA)
Input leakage current,any input
(0 V ≤ VIH ≤ Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V ≤ VOUT ≤ Vcc + 0.3V)
Average VCC supply current:
-50 ns version
-60 ns version
-70 ns version
VIH
VIL
VOH
VOL
II(L)
IO(L)
ICC1
2.4
– 0.5
2.4
–
– 10
– 10
Vcc+0.5
0.8
–
0.4
10
10
– 200
– 180
– 160
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA 2) 3) 4)
mA 2) 3) 4)
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current (RAS = CAS = VIH) ICC2
Average VCC supply current, during RAS-only ICC3
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
–
–
–
–
2 mA –
200 mA 2) 4)
180 mA 2) 4)
160 mA 2) 4)
(RAS cycling: CAS = VIH, tRC = tRC min.)
Semiconductor Group
5
5 Page HYB 5118160BSJ-50/-60/-70
1M x 16-DRAM
RAS
V
IH
VIL
UCAS
LCAS
V
IH
VIL
V
IH
Address
VIL
V
IH
WE
VIL
V
IH
OE
VIL
V
I/O IH
(Inputs) VIL
V
I/O OH
(Outputs) VOL
tRC
tRAS
tRP
tCSH
tRCD
tRSH
tCAS
tASR
tRAD
tASC
tCAH
tRAL
Row
Column
tRAH
tRCS
tAA
tOEA
tCRP
tASR
tRCH
tRRH
Row
tDZC
tDZO
tCAC
tCLZ
Hi Z
tRAC
tODD
tCDD
tOEZ
tOFF
Valid Data Out
Hi Z
“H” or “L”
WL1
Read Cycle
Semiconductor Group
11
11 Page |
Páginas | Total 24 Páginas | |
PDF Descargar | [ Datasheet HYB5118160BSJ-50.PDF ] |
Número de pieza | Descripción | Fabricantes |
HYB5118160BSJ-50 | 1M x 16-Bit Dynamic RAM | Siemens |
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