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What is WEDPNF8M721V-1010BM?

This electronic component, produced by the manufacturer "ETC", performs the same function as "8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package".


WEDPNF8M721V-1010BM Datasheet PDF - ETC

Part Number WEDPNF8M721V-1010BM
Description 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package
Manufacturers ETC 
Logo ETC Logo 


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White Electronic Designs WEDPNF8M721V-XBX
8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module
Multi-Chip Package ADVANCED*
FEATURES
n Sector Architecture
n Package:
• 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm
n Commercial, Industrial and Military Temperature Ranges
n Weight:
• WEDPNF8M721V-XBX - 2.5 grams typical
• One 16KByte, two 8KBytes, one 32KByte, and fif
teen 64KBytes in byte mode
• One 8K word, two 4K words, one 16K word, and
fifteen 32K word sectors in word mode.
• Any combination of sectors can be concurrently
erased. Also supports full chip erase
SDRAM PERFORMANCE FEATURES
n Organized as 8M x 72
n High Frequency = 100, 125MHz
n Single 3.3V ±0.3V power supply
n Fully Synchronous; all signals registered on positive
edge of system clock cycle
n Boot Code Sector Architecture (Bottom)
n Embedded Erase and Program Algorithms
n Erase Suspend/Resume
• Supports reading data from or programing data to a
sector not being erased
BENEFITS
n Internal pipelined operation; column address can be
changed every clock cycle
n Internal banks for hiding row access/precharge
n Programmable Burst length 1,2,4,8 or full page
n 4096 refresh cycles
FLASH PERFORMANCE FEATURES
n User Configurable as 1Mx8 or 512Kx16
n Access Times of 100, 120, 150ns
n 3.3 Volt for Read and Write Operations
n 1,000,000 Erase/Program Cycles
n 42% SPACE SAVINGS
n Reduced part count
n Reduced I/O count
• 14% I/O Reduction
n Suitable for hi-reliability applications
n SDRAM Upgradeable to 16M x 72 density (contact
factory for information)
n Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32)
density
* This data sheet describes a product that may or may not be under
development and is subject to change or cancellation without notice.
September 2002 Rev. 3
1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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WEDPNF8M721V-1010BM equivalent
White Electronic Designs WEDPNF8M721V-XBX
Signal Name
CAS3
DQML3
DQMH3
CS4
WE4
CLK4
CKE4
RAS4
CAS4
DQML4
DQMH4
DQ0 - 15
DQ16 - 31
DQ32 - 47
DQ48 - 63
DQ64 - 79
DNU
PACKAGE PINOUT LISTING (CONTINUED)
Pin Number
R3
U2
N3
T10
U9
R9
R10
U10
V10
V9
T9
E1, F1, E2, G1, F2, H1, J1, G2, A3, A2, B2, C2, B1, D2, C1, D1,
E16, F16, G16, H16, E17, F17, G17, H17, D18, A17, B17, C17, D17, A16, B16, C16
R17, T17, U16, V16, T16, R16, U17, P18, N16, P16, P17, M16, M17, N17, N18, L17
R1, P2, T1, R2, P3, U1, V2, T2, M2, N2, L2, M1, P1, N1, L1, K1
U8, U6, V5, V6, U7, U5, V7, V8, R8, R6, T8, T6, R7, R5, T7, T5
F6, G5, R14, U14, V1
5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for WEDPNF8M721V-1010BM electronic component.


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Featured Datasheets

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WEDPNF8M721V-1010BCThe function is 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package. ETCETC
WEDPNF8M721V-1010BIThe function is 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package. ETCETC
WEDPNF8M721V-1010BMThe function is 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package. ETCETC

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