UPD16814GS Datasheet PDF - NEC
Part Number | UPD16814GS | |
Description | MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT | |
Manufacturers | NEC | |
Logo | ||
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MOS INTEGRATED CIRCUIT
µPD16814
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By
complementing the P channel and N channel of the output stage, the circuit current is substantially improved as
compared with that of the conventional charge pump driver.
Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the
driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.
FEATURES
• Low ON resistance (sum of ON resistance of top and bottom FETs)
RON1 = 2.0 Ω TYP.
• Low current consumption: IDD = 100 µA MAX.
• Four input modes independently controlling dual H bridge drivers
• Stop and Brake modes selectable
• Surface-mount mini-mold package: 16-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
VM1
1A
PGND1
2A
VDD
IN1
IN3
IN2
1
2
3
4
5
6
7
8
16 NC
15 1B
14 PGND2
13 2B
12 VM2
11 SEL
10 IN4
9 DGND
ORDERING INFORMATION
Part Number
µPD16814GS
Package
16-pin plastic SOP (300 mil)
The information in this document is subject to change without notice.
Document No. S10112EJ4V0DS00 (4th edition)
Date Published August 1997 N
Printed in Japan
©
1997
|
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µPD16814
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Parameter
Supply voltage (motor block)
Supply voltage (control block)
H bridge drive currentNote
Operating temperature
Symbol
VM
VDD
IDR
TA
MIN.
4.0
4.0
0
TYP.
5.0
5.0
MAX.
6.0
6.0
±415
60
Unit
V
V
mA
°C
Note When mounted on board (100 × 100 × 1 mm, glass epoxy)
ELECTRICAL CHARACTERISTICS (Within recommended operating conditions unless otherwise specified)
Parameter
VM pin current with output transistor OFF
VDD pin current
Control pin high-level input current
Control pin low-level input current
Control pin high-level input voltage
Control pin low-level input voltage
H bridge circuit ON resistanceNote 1
RON relative accuracy
H bridge output circuit propagation delay time
H bridge output circuit propagation delay time
H bridge output circuit rise time
H bridge output circuit fall time
Symbol
IM
IDD
IIH
IIL
VIH
VIL
RON1
∆RON
∆RON
tPHL
tPLH
tTHL
tTLH
Condition
VM = 6.0 V, VDD = 6.0 V
VIN = VDD
VIN = 0 V
VM = 5 V, VDD = 5 V
Excitation direction <2>, <4>Note 2
Excitation direction <1>, <3>
VM = 5 V, VDD = 5 VNote 3
TA = 25 °C, RM = 20 Ω
VM = 5 V, VDD = 5 VNote 3
TA = 25 °C, RM = 20 Ω
MIN.
3.0
–0.3
TYP. MAX. Unit
1.0 µA
0.1 mA
1.0 µA
–1.0 µA
VDD + 0.3 V
0.8 V
2.0 4.0
Ω
±5 %
±10
1.8 2.5 µs
0.2 0.65 µs
0.2 0.4 µs
0.1 0.2 µs
Notes 1. Sum of ON resistance of top and bottom transistors
2. For the excitation direction, refer to FUNCTION TABLE.
3.
IN1-IN4
IM
tPHL
tTHL
tPLH
tTLH
5
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