UPC8163TB Datasheet PDF - NEC
Part Number | UPC8163TB | |
Description | SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER | |
Manufacturers | NEC | |
Logo | ||
There is a preview and UPC8163TB download ( pdf file ) link at the bottom of this page. Total 16 Pages |
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BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8163TB
SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER
FOR CELLULAR TELEPHONE
DESCRIPTION
The µPC8163TB is a silicon monolithic integrated circuit designed as frequency up-converter for cellular telephone
transmitter stage. The µPC8163TB has improved intermodulation performance and smaller package.
The µPC8163TB is manufactured using NEC’s 20 GHz fT NESATTMlll silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Recommended operating frequency
• Supply voltage
• High-density surface mounting
• Higher IP3
• Minimized carrier leakage
: fRFout = 0.8 GHz to 2.0 GHz, fIFin = 50 MHz to 300 MHz
: VCC = 2.7 to 3.3 V
: 6-pin super minimold package
: OIP3 = +9.5 dBm @ fRFout = 830 MHz
: Due to double balanced mixer
APPLICATIONS
• Digital cellular phones
ORDERING INFORMATION
Part Number
µPC8163TB-E3
Package
6-pin super minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
Qty 3 kp/reel
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8163TB)
Caution Electro-static sensitive device
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13636EJ2V0DS00 (2nd edition)
Date Published June 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999
|
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µPC8163TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Power Dissipation of Package
Operating Ambient Temperature
Storage Temperature
Maximum Input Power
Symbol
VCC
PD
TA
Tstg
Pin
Test Conditions
TA = +25°C, Pin 5 and 6
Mounted on double-sided copperclad 50 × 50 × 1.6
mm epoxy glass PWB
TA = +85°C
Rating
3.6
200
−40 to +85
−55 to +150
+10
Unit
V
mW
°C
°C
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating Ambient Temperature
Local Input Level
RF Output Frequency
IF Input Frequency
Symbol
VCC
TA
PLOin
fRFout
fIFin
Test Conditions
The same voltage should be applied
to pin 5 and 6
Zs = 50 Ω (without matching)
With external matching circuit
MIN.
2.7
−40
–10
0.8
50
TYP.
3.0
+25
–5
–
–
MAX.
3.3
+85
0
2.0
300
Unit
V
°C
dBm
GHz
MHz
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VCC = VRFout = 3.0 V, fIFin = 150 MHz, PLOin = –5 dBm)
Parameter
Symbol
Conditions
Circuit Current
ICC No Signal
Conversion Gain 1
CG1
fRFout = 830 MHz, PIFin = –20 dBm
Conversion Gain 2
CG2
fRFout = 1.9 GHz, PIFin = –20 dBm
Maximum RF Output Power 1
PO(sat) 1
fRFout = 830 MHz, PIFin = 0 dBm
Maximum RF Output Power 2
PO(sat) 2
fRFout = 1.9 GHz, PIFin = 0 dBm
MIN.
11.5
6
2.5
–1.5
–4.5
TYP.
16.5
9
5.5
0.5
–2
MAX.
23
12
8.5
–
–
Unit
mA
dB
dB
dBm
dBm
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
(TA = +25°C, VCC = VRFout = 3.0 V, PLOin = –5 dBm)
Parameter
Symbol
Conditions
Input Third Order Distortion Intercept
Point
IIP3 1
IIP3 2
fIFin1 = 150.0 MHz
fIFin2 = 150.4 MHz
fRFout = 830 MHz
fRFout = 1.9 GHz
Output Third-Order Distortion
Intercept Point
OIP3 1
OIP3 2
fIFin1 = 150.0 MHz
fIFin2 = 150.4 MHz
fRFout = 830 MHz
fRFout = 1.9 GHz
SSB Noise Figure
SSB NF fRFout = 830 MHz, fIFin = 150 MHz
Data
0.5
0.5
+9.5
+6.0
12.5
Unit
dBm
dBm
dB
Data Sheet P13636EJ2V0DS00
5
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Information | Total 16 Pages | |
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