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What is UPC8131TA?

This electronic component, produced by the manufacturer "NEC", performs the same function as "VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE".


UPC8131TA Datasheet PDF - NEC

Part Number UPC8131TA
Description VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC8119T, µPC8120T
VARIABLE GAIN AMPLIFIER SILICON MMIC
FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
DESCRIPTION
The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to
100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two
types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package
contribute to make system lower voltage, decreased space and fewer components.
The µPC8119T and µPC8120T are manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This
process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external
pollution and prevent corrosion / migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Recommended operating frequency : f = 100 MHz to 1.92 GHz
• Supply voltage
: VCC = 2.7 to 3.3 V
• Low current consumption
: ICC = 11 mA TYP. @ VCC = 3.0 V
• Gain control voltage
: VAGC = 0.6 to 2.4 V (recommended)
• Two types of gain control
: µPC8119T = VAGC up vs. Gain down
µPC8120T = VAGC up vs. Gain up
• AGC control can be constructed by external control circuit.
• High-density surface mounting
(Forward control)
(Reverse control)
APPLICATIONS
• 1.9 GHz cordless telephone (PHS base-station and so on)
• 800 MHz to 900 MHz or 1.5 GHz Digital cellular telephone (PDC800M, PDC1.5G and so on)
ORDERING INFORMATION
Part Number
µPC8119T-E3
µPC8120T-E3
Package
6-pin minimold
Marking
C2M
C2N
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel.
Gain Control Type
Forward control
Reverse control
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8119T, µPC8120T)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P11027EJ2V0DS00 (2nd edition)
Date Published October 1998 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1996

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UPC8131TA equivalent
µPC8119T, µPC8120T
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 , External matched output port)
Parameter
Circuit Current
Maximum Power Gain
Gain Control RangeNote
Noise Figure
Isolation
Input Return Loss
1 dB Compression Output
Power
Symbol
Test Conditions
ICC
GPMAX
GCR
NF
ISL
RLin
PO (1 dB)
No signal, ICC = IVCC + Iout
f = 950 MHz, Pin = –30 dBm
f = 1440 MHz, Pin = –30 dBm
f = 950 MHz, Pin = –30 dBm
f = 1440 MHz, Pin = –30 dBm
f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
f = 950 MHz, GPMAX
f = 1440 MHz, GPMAX
µPC8119T
µPC8120T
Unit
MIN. TYP. MAX. MIN. TYP. MAX.
7.5 11 15 7.5 11 15 mA
10 12.5 15 10.5 13 15.5 dB
10 13 16 10.5 13.5 16.5
40 50 – 40 50 – dB
35 45 – 35 45
– 8.5 11.5 – 9.0 12 dB
– 7.5 10.5 – 7.5 10.5
27 32 – 26 31 – dB
31 36 – 30 35 –
3 6 – 3 6 – dB
36–36–
0 +3
+1.0 +4
– +0.5 +3.5 – dBm
– 0 +3 –
Note Gain Control Range (GCR) specification: GCR = GPMAX – GPMIN (dB)
Conditions µPC8119T: GPMAX @ VAGC = 0 V, GPMIN @ VAGC = VCC
µPC8120T: GPMAX @ VAGC = VCC, GPMIN @ VAGC = 0 V
Remark Measured on TEST CIRCUIT 1 and 2
STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 , External matched output port)
Parameter
Symbol
Test Conditions
Maximum Power Gain
Gain Control RangeNote
GPMAX
GCR
Noise Figure
NF
1 dB Compression Output Power PO (1 dB)
f = 1900 MHz, Pin = –30 dBm
f = 1900 MHz, Pin = –30 dBm
f = 1900 MHz, GPMAX
f = 1900 MHz, GPMAX
Reference Value
µPC8119T
µPC8120T
12.5 13
22 22
7.2 7.3
+3.0 +2.5
Unit
dB
dB
dB
dBm
Note Gain Control Range (GCR) specification: GCR = GPMAX – GPMIN (dB)
Conditions µPC8119T: GPMAX @ VAGC = 0 V, GPMIN @ VAGC = VCC
µPC8120T: GPMAX @ VAGC = VCC, GPMIN @ VAGC = 0 V
Remark Measured on APPLICATION CIRCUIT EXAMPLE
5


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UPC8131TAThe function is VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE. NECNEC
UPC8131TAThe function is -15 dBm INPUT/ VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE. NECNEC
UPC8131TA-E3The function is -15 dBm INPUT/ VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE. NECNEC

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