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PDF UPC3210TB-E3 Data sheet ( Hoja de datos )
| Número de pieza | UPC3210TB-E3 | |
| Descripción | 5 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC3210TB
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
DESCRIPTION
The µPC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The µPC3210TB is
suitable to systems required wideband operation from HF to L band.
This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• High-density surface mounting: 6-pin super minimold package
• Supply voltage
: VCC = 4.5 to 5.5 V
• Wideband response
: fu = 2.3 GHz TYP. @3 dB bandwidth
• Power gain
: GP = 20 dB TYP. @f = 1.5 GHz
• Noise figure
: NF = 3.4 dB TYP. @f = 1.5 GHz
APPLICATION
• Systems required wideband operation from HF to 2.0 GHz
ORDERING INFORMATION
Part Number
µPC3210TB-E3
Package
6-pin super minimold
Marking
C2X
Supplying Form
Embossed tape 8 mm wide.
1, 2, 3 pins face to perforation side of the tape.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order: µPC3210TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P13593EJ2V0DS00 (2nd edition)
Date Published May 1999 N CP(K)
Printed in Japan
The mark shows major revised points.
©
1998, 1999
1 page  
TEST CIRCUIT
µPC3210TB
VCC
1 000 pF 1 000 pF
C4 C6
C3
1 000 pF
6
C5
1 000 pF
50 Ω
IN
C1
1 000 pF
1
4 C2
1 000 pF
50 Ω
OUT
2, 3, 5
EXAMPLE OF APPLICATION CIRCUIT
VCC
1 000 pF
C3
C4 1 000 pF
1 000 pF C5
1 000 pF
C6
50 Ω
IN
C1
1 000 pF
1
6
4 C7
1 000 pF
2, 3, 5
6
C8 1
4 C2
1 000 pF
R1
50 to 200 Ω
Tploeasstaebciloiznenoepcet rRa1t,ioCn8,
2, 3, 5
1 000 pF
50 Ω
OUT
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Capacitors for VCC, input and output pins
1 000 pF capacitors are recommendable as bypass capacitor for VCC pin and coupling capacitors for input/output
pins.
Bypass capacitor for VCC pin is intended to minimize VCC pin’s ground impedance. Therefore, stable bias can be
supplied against VCC fluctuation.
Coupling capacitors for input/output pins are intended to minimize RF serial impedance and cut DC.
To get flat gain from 100 MHz up, 1 000 pF capacitors are assembled on the test circuit. [Actually, 1 000 pF
capacitors give flat gain at least 10 MHz. In the case of under 10 MHz operation, increase the value of coupling
capacitor such as 2 200 pF. Because the coupling capacitors are determined by the equation of C = 1/(2 π fZs).]
Data Sheet P13593EJ2V0DS00
5
5 Page 
S-PARAMETER (VCC = 5.0 V)
S11−FREQUENCY
0.1 G
1G
2.0 G
µPC3210TB
S22−FREQUENCY
2.0 G
0.1 G
1.0 G
Data Sheet P13593EJ2V0DS00
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet UPC3210TB-E3.PDF ] | |
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