|
|
PDF UPA1910 Data sheet ( Hoja de datos )
| Número de pieza | UPA1910 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de UPA1910 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1910
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1910 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1910 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 80 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 90 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
RDS(on)3 = 100 mΩ MAX. (VGS = –3.0 V, ID = –1.0 A)
RDS(on)4 = 130 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)
• ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1910TE
6-pin Mini Mold (Thin Type)
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–12
Gate to Source Voltage
VGSS
–10/+5
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±2.5
±10
• Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: TB
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13105EJ2V0DS00 (2nd edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999
1 page  
µ PA1910
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
ID = −1.5 A
100
50
0 −5 −10 −15 −20
VGS - Gate to Source Voltage - V
10000
SWITCHING CHARACTERISTICS
1000
100
10
−0.1
tf
tr
td(off)
td(on)
VDD = −10 V
VGS(on) = −4.0 V
RG = 10 Ω
−1 −10
ID - Drain Current - A
DYNAMIC INPUT CHARACTERISTICS
−6
ID = −3.0 A
−5
−4 VDD = −10 V
−6 V
−3
−2
−1
0 1 234 5 6 7
QG - Gate Charge - nC
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
Ciss
Coss
100
−0.1
Crss
−1.0
−10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 0 V
10
1
0.1
0.01
0.001
0.00010.2
0.4 0.6 0.8 1.0
VF(S-D) - Source to Drain Voltage - V
1.2
Data Sheet D13105EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1910.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UPA1910 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
| UPA1911 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
| UPA1912 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
| UPA1913 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |