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PDF UPA1890 Data sheet ( Hoja de datos )
| Número de pieza | UPA1890 | |
| Descripción | N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1890
N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1890 is a switching device which can be driven directly
by a 4.0-V power source.
The µPA1890 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• Can be driven by a 4.0-V power source
• Low on-state resistance
N-Channel RDS(on)1 = 27 mΩ MAX. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 37 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)3 = 47 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A)
P-Channel RDS(on)1 = 37 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 56 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 64 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
• Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1890GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
N-Channel / P-Channel
Drain to Source Voltage
VDSS
30/–30
V
Gate to Source Voltage
VGSS
±20/ # 20
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
ID(DC)
ID(pulse)
PT
±6.0/ # 5.0
±24/ # 20
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
PACKAGE DRAWING (Unit : mm)
85
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection Source1
Diode
Gate
Protection Source2
Diode
N-Channel
P-Channel
To keep good radiate condition,
it is recommended that all pins
are soldering to print board.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14762EJ1V0DS00 (1st edition)
Date Published March 2000 NS CP(K)
Printed in Japan
©
2000
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
VGS = 4.0 V
50
TA = 125˚C
40
75˚C
30 25˚C
25˚C
20
10
0
0.1 1.0
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = 10 V
30 TA = 125˚C
75˚C
20 25˚C
25˚C
10
0
0.1 1.0
10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 3.0 A
40
30
20
10
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
µPA1890
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
VGS = 4.5 V
40
TA = 125˚C
75˚C
30
25˚C
20 25˚C
10
0
0.1
1.0 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 3.0 A
40
VGS = 4.0 V
4.5 V
30
10 V
20
10
−50
0 50 100
Tch - Channel Temperature -˚C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
1 10 100
VDS - Drain to Source Voltage - V
Data Sheet G14762EJ1V0DS00
5
5 Page 
[MEMO]
µPA1890
Data Sheet G14762EJ1V0DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPA1890.PDF ] | |
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