UPA1731 Datasheet PDF - NEC
Part Number | UPA1731 | |
Description | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
Manufacturers | NEC | |
Logo | ||
There is a preview and UPA1731 download ( pdf file ) link at the bottom of this page. Total 8 Pages |
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MOS FIELD EFFECT TRANSISTOR
µPA1731
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1731 is P-Channel MOS Field Effect Transistor
designed for power management applications of
notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-resistance
RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A)
RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A)
• RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A)
• • Low Ciss : Ciss =2600 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1731G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS –30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 20 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
# 10
# 40
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14285EJ1V0DS00 (1st edition)
Date Published October 1999 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1999
|
|
µPA1731
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
25
Pulsed
VGS = −4.0 V
20
−4.5 V
15
−10 V
10
5
ID = −5.0 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
−1 0000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
−1 000
−100
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
−10
−0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
10000
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/µ s
VGS = 0 V
100
10
1
−0.1
−1
−10 −100
IF - Diode Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = −4.5 V
0V
10
1
0.1
0.01
0.001
0
0.5 1.0
VF - Source to Drain Voltage - V
1.5
1 000
100
SWITCHING CHARACTERISTICS
td(off)
tf
tr
td(on)
10
1
−0.1
VDS = −15 V
VGS = −10 V
RG = 10Ω
−1 −10 −100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40 −14
ID = −10 A
−12
−30
VDS = −24 V
VGS
−15 V
−20 −6 V
−10
−8
−6
−4
−10
−2
VDS
0
0 10 20 30 40 50
QG - Gate Charge - nC
Data Sheet G14285EJ1V0DS00
5
Preview 5 Page |
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