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PDF UPA1728 Data sheet ( Hoja de datos )
| Número de pieza | UPA1728 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1728
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1728 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Single chip type
• Low On-state Resistance
5 RDS(on)1 = 19 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A)
5 RDS(on)2 = 23 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
5 RDS(on)3 = 24 mΩ (TYP.) (VGS = 4.0 V, ID = 4.5 A)
5 • Low Ciss : Ciss = 1700 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1728
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1, 2, 3 ; Source
4 ; Gate
5, 6, 7, 8 ; Drain
14
5.37 Max.
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS 60 V
VGSS ±20 V
EQUIVALENT CIRCUIT
Drain Current (DC)
ID(DC) ±9 A
Drain Current (Pulse) Note1
ID(pulse)
±36
A
Total Power Dissipation (TA = 25 °C) Note2
PT
2.0 W
Channel Temperature
Tch 150 °C
Gate
Drain
Body
Diode
Storage Temperature
Tstg –55 to + 150 °C
Single Avalanche Current Note3
IAS 9 A
Single Avalanche Energy Note3
EAS 8.1 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
5 2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25°C, RG = 25 Ω, TGS = 20 V →0 V
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14321EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet UPA1728.PDF ] | |
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