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PDF UPA1709 Data sheet ( Hoja de datos )
| Número de pieza | UPA1709 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1709
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
switch.
FEATURES
• Low on-resistance
RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A)
RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A)
• Low Ciss : Ciss = 1850 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1709G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
6.0 ±0.3
4.4
1.27 0.78 Max.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.8
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±25
V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
±9.0
±36
2.0
A
A
W
Channel Temperature
Tch 150
°C
Storage Temperature
Tstg –55 to + 150
°C
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm
EQUIVARENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
Document No. G13436EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
© 1998
1 page  
µ PA1709
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
VGS = 4.5 V
20
10 V
10
0 ID = 4.5 A
-50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
10
0.1 1 10
VDS - Drain to Source Voltage - V
100
1 000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/ s
VGS = 0 V
100
10
1
0.1 1 10
ID - Diode Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
Pulsed
10
0V
1
0.1
0 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
100
10
td(off)
tf
td(on)
tr
VDS = 20 V
VGS = 10 V
1 RG = 10
0.1 1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
VDD = 32 V
20 V
60 8 V
ID = 9.0 A
VGS
14
12
10
40 8
6
20 4
VDS 2
0 20 40 60 80
QG - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1709.PDF ] | |
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