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PDF UPA1552 Data sheet ( Hoja de datos )
| Número de pieza | UPA1552 | |
| Descripción | N-CHANNEL POWER MOS FET ARRAY SWITCHING USE | |
| Fabricantes | NEC | |
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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µPA1552B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1552B is N-channel Power MOS FET Array
that built in 4 circuits designed, for solenoid, motor and
lamp driver.
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID(DC) = ±5.0 A
RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 3 A)
RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 3 A)
• Low Input Capacitance Ciss = 200 pF TYP.
ORDERING INFORMATION
Type Number
µPA1552BH
Package
10 Pin SIP
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS Note 1
60
Gate to Source Voltage
VGSS Note 2
±20
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
ID(DC)
ID(pulse) Note 3
PT1 Note 4
PT2 Note 5
±5.0
±20
28
3.5
Channel Temperature
TCH
150
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Tstg
IAS Note 6
EAS Note 6
–55 to +150
5.0
2.5
V
V
A/unit
A/unit
W
W
˚C
˚C
A
mJ
1.4 0.6±0.1
2.54
1.4
0.5±0.1
1 2 3 4 5 6 7 8 910
CONNECTION DIAGRAM
3579
24 68
1 10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
Notes 1. VGS = 0
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
5. 4 Circuits, TA = 25 ˚C
2. VDS = 0
4. 4 Circuits, TC = 25 ˚C
6. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V → 0,
RG = 25 Ω, L = 100 µH
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10599EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
© 1995
1 page  
µPA1552B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
VGS = 4 V
150
100 VGS = 10 V
50
0
- 50
1 000
ID = 3 A
0 50 100 150
TCH - Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0.1
1 000
1 10
VDS - Drain to Source Voltage - V
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µ s
VGS = 0
100
10
0.1
1.0 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
10
1.0 VGS = 10 V
0.1
VGS = 0
0.01
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
td(off)
tf
100
tr
10
0.1
td(on)
VDD
=.
.
30
V
VGS = 10 V
RG = 10 Ω
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60
VDD = 12 V
30 V
48 V
40
12
ID = 5 A
VGS
10
8
6
20 4
2
VDS
0
0 2 4 6 8 10 12 14 16
QG - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1552.PDF ] | |
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