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What is UPA1500BH?

This electronic component, produced by the manufacturer "NEC", performs the same function as "N-CHANNEL POWER MOS FET ARRAY SWITCHING USE".


UPA1500BH Datasheet PDF - NEC

Part Number UPA1500BH
Description N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µPA1500B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1500B is N-channel Power MOS FET Array
that built in 4 circuits and surge absorber designed for
solenoid, motor and lamp driver.
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID(DC) = ±3 A
RDS(on)1 0.18 MAX. (VGS = 10 V, ID = 2 A)
RDS(on)2 0.24 MAX. (VGS = 4 V, ID = 2 A)
• Low Input Capacitance Ciss = 200 pF TYP.
• Surge Absorber, built in
PACKAGE DIMENSIONS
(in millimeters)
31.5 MAX.
4.2 MAX.
1 2 3 4 5 6 7 8 9 10 11 12
2.54 TYP.
0.7±0.1
1.4±0.1 0.5±0.1 1.4 TYP.
ORDERING INFORMATION
Type Number
µPA1500BH
Package
12 Pin SIP
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS Note 1
60
Gate to Source Voltage
VGSS Note 2
±20
V
V
Drain Current (DC)
ID(DC)
Drain Current (pulse)
ID(pulse) Note 3
Repetitive peak Reverse Voltage VRRM Note 4
Diode Forward Current
IF(av) Note 4
Total Power Dissipation
PT1 Note 5
Total Power Dissipation
PT2 Note 6
±3.0
±12
65
3.0
28
4.0
A/unit
A/unit
V
A/unit
W
W
Channel Temperature
TCH
150 ˚C
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Tstg
IAS Note 7
EAS Note 7
–55 to 150
3.0
0.9
˚C
A
mJ
Notes 1. VGS = 0
2. VDS = 0
3. PW 10 µs, Duty Cycle 1 %
4. Rating of Surge Absorber
5. 4 Circuits, TC = 25 ˚C
6. 4 Circuits, TA = 25 ˚C
7. Starting TCH = 25 ˚C, V DD = 30 V, VGS = 20 V 0,
RG = 25 , L = 100 µH
ELECTRODE CONNECTION
1, 5, 8, 12 GATE
2, 4, 9, 11 DRAIN, ANODE
6, 7 SOURCE
3, 10
CATHODE
CONNECTION DIAGRAM
234
D5 D6
RG
1
D1
5
RG
D2
ZD
6
ZD
9 10 11
D7 D8
RG
8
D3 RG
12
D4
ZD ZD
7
D1 to D4 : Body Diode
D5 to D8 : Surge Absorber
ZD : Gate to Source Protection Diode
RG : Gate Input Resistance 330 TYP.
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10597EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
© 1995

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UPA1500BH equivalent
µPA1500B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
300
200 VGS = 4 V
100 VGS = 10 V
0
–50
1 000
ID = 2 A
0 50 100
TCH - Channel Temperature -˚C
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0.1
1 000
1 10
VDS - Drain to Source Voltage - V
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/ µ s
VGS = 0
100
10
0.1
1.0 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
10
1.0
VGS = 10 V
0.1
VGS = 0
0.01
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
td(off)
tf
tr
100
10
0.1
td(on)
VDD .=. 30 V
VGS = 10 V
RG = 10
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
VDD = 12 V
30 V
48 V
40
ID = 3 A
VGS 10
8
6
20 4
2
VDS
0
0 2 4 6 8 10 12 14 16
Qg - Gate Charge - nC
5


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UPA1500BHThe function is N-CHANNEL POWER MOS FET ARRAY SWITCHING USE. NECNEC

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