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Número de pieza | UN9113 | |
Descripción | Silicon PNP epitaxial planer transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UN9113 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! Transistors with built-in Resistor
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1.6±0.15
0.4 0.8±0.1 0.4
Unit: mm
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN9111
6A
10kΩ
q UN9112
6B
22kΩ
q UN9113
6C
47kΩ
q UN9114
6D
10kΩ
q UN9115
6E
10kΩ
q UN9116
6F
4.7kΩ
q UN9117
6H
22kΩ
q UN9118
6I
0.51kΩ
q UN9119
6K
1kΩ
q UN9110
6L
47kΩ
q UN911D
6M
47kΩ
q UN911E
6N
47kΩ
q UN911F
6O
4.7kΩ
q UN911H
6P
2.2kΩ
q UN911L
6Q
4.7kΩ
q UNR911AJ 6X
100kΩ
q UNR911BJ 6Y
100kΩ
q UNR911CJ 6Z
—
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
100kΩ
—
47kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
125
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
+0.05
0.85–0.03
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
B
R2
C
E
1
1 page UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9112
–160
–140
–120
–100
– 80
– 60
– 40
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN9113
–160
–140
–120
–100
IC — VCE
IB= –1.0mA Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–80 –0.4mA
–60 –0.3mA
–40 –0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
Ta=75˚C
300
25˚C
200
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
5
5 Page UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN911D
IC — VCE
– 60
IB= –1.0mA
– 0.9mA
Ta=25˚C
– 0.8mA
– 50
– 40
– 0.3mA
–30 –0.2mA
– 0.7mA
– 0.6mA
– 0.5mA
–20 –0.4mA
– 0.1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
120
25˚C
80 –25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
–3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
–1.5
–2.0 –2.5 –3.0 –3.5
Input voltage VIN (V)
– 4.0
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN911E
IC — VCE
– 60
IB= –1.0mA
– 0.9mA
–0.8mA –0.7mA
– 50
Ta=25˚C
– 40
– 0.3mA
–30 –0.2mA
– 0.6mA
– 0.5mA
– 0.4mA
–20 –0.1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE=–10V
300
200
Ta=75˚C
100 25˚C
– 25˚C
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet UN9113.PDF ] |
Número de pieza | Descripción | Fabricantes |
UN9110 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN9111 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN9112 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN9113 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
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