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PDF UN7231 Data sheet ( Hoja de datos )
| Número de pieza | UN7231 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors with built-in Resistor
UN7231
Silicon NPN epitaxial planer transistor
For amplification of the low frequency
s Features
q High forward current transfer ratio hFE.
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
20
V
Collector to emitter voltage VCEO
20
V
Collector current
IC 0.7 A
Peak collector current
ICP
1.5
A
Total power dissipation
PT*
1.0
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg –55 to +150
˚C
* Printed circuit board: Copper foil area of 1cm2 or more and thickness of
1.7mm for the collector portion.
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
0.4±0.04
marking
1 : Emitter
2 : Collector
3 : Base
EIAJ : SC–62
Mini-Power Type Package
Marking Symbol: IC
Internal Connection
R1(1kΩ)
B
R2
(47kΩ)
C
E
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Input resistance
Resistance ratio
ICBO
ICEO
IEBO
VCBO
VCEO
hFE
VCE(sat)
fT
R1
R1/R2
VCB = 15V, IE = 0
VCE = 15V, IB = 0
VEB = 14V, IC = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
VCE = 10V, IC = 150mA*
IC = 500mA, IB = 5mA*
VCB = 20V, IE = –20mA, f = 200MHz
min
20
20
800
0.7
0.016
typ max Unit
1 µA
10 µA
0.5 mA
V
V
2100
0.4 V
55 MHz
1 1.3 kΩ
0.021 0.025
*Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UN7231.PDF ] | |
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