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Datasheet IDT7MP4060 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT7MP4060 | 128K x 32 CMOS STATIC RAM MODULES Integrated Device Technology, Inc.
128K x 32 CMOS STATIC RAM MODULES
DESCRIPTION:
IDT7MP4060 IDT7MP4095
FEATURES:
• High density 4 megabit static RAM modules • Low profile 64-pin ZIP (Zig-zag In-line vertical Package), 64-lead, 72-lead SIMMs (Single In-line Memory Modules) • Fast access tim |  Integrated Device | cmos |
| 2 | IDT7MP4060S15M | 128K x 32 CMOS STATIC RAM MODULES Integrated Device Technology, Inc.
128K x 32 CMOS STATIC RAM MODULES
DESCRIPTION:
IDT7MP4060 IDT7MP4095
FEATURES:
• High density 4 megabit static RAM modules • Low profile 64-pin ZIP (Zig-zag In-line vertical Package), 64-lead, 72-lead SIMMs (Single In-line Memory Modules) • Fast access tim | Integrated Device | cmos |
| 3 | IDT7MP4060S15Z | 128K x 32 CMOS STATIC RAM MODULES Integrated Device Technology, Inc.
128K x 32 CMOS STATIC RAM MODULES
DESCRIPTION:
IDT7MP4060 IDT7MP4095
FEATURES:
• High density 4 megabit static RAM modules • Low profile 64-pin ZIP (Zig-zag In-line vertical Package), 64-lead, 72-lead SIMMs (Single In-line Memory Modules) • Fast access tim | Integrated Device | cmos |
| 4 | IDT7MP4060S20M | 128K x 32 CMOS STATIC RAM MODULES Integrated Device Technology, Inc.
128K x 32 CMOS STATIC RAM MODULES
DESCRIPTION:
IDT7MP4060 IDT7MP4095
FEATURES:
• High density 4 megabit static RAM modules • Low profile 64-pin ZIP (Zig-zag In-line vertical Package), 64-lead, 72-lead SIMMs (Single In-line Memory Modules) • Fast access tim | Integrated Device | cmos |
| 5 | IDT7MP4060S20Z | 128K x 32 CMOS STATIC RAM MODULES Integrated Device Technology, Inc.
128K x 32 CMOS STATIC RAM MODULES
DESCRIPTION:
IDT7MP4060 IDT7MP4095
FEATURES:
• High density 4 megabit static RAM modules • Low profile 64-pin ZIP (Zig-zag In-line vertical Package), 64-lead, 72-lead SIMMs (Single In-line Memory Modules) • Fast access tim | Integrated Device | cmos |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | | |
| 8 | IDT101494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | | |
| 9 | IDT10494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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