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Número de pieza | TEA1110A | |
Descripción | Low voltage versatile telephone transmission circuit with dialler interface | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TEA1110A (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
No Preview Available ! INTEGRATED CIRCUITS
DATA SHEET
TEA1110A
Low voltage versatile telephone
transmission circuit with dialler
interface
Product specification
Supersedes data of 1996 Nov 26
File under Integrated Circuits, IC03
1997 Apr 22
1 page Philips Semiconductors
Low voltage versatile telephone
transmission circuit with dialler interface
Product specification
TEA1110A
handbook, full pagewidth
Rline
Iline
LN
1
Rexch
Ish
Vexch
Vd
ISLPE
2
SLPE
RSLPE
20 Ω
RCC
619 Ω
from pre amp
I*
VCC
14
ICC
TEA1110A
3
REG
CREG
4.7 µF
11
VEE
Fig.3 Supply configuration.
IP
CVCC peripheral
100 µF circuits
MGG737
The internal circuitry of the TEA1110A is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (RCC) and must be
decoupled by a capacitor CVCC. It may also be used to
supply peripheral circuits such as dialling or control
circuits. The VCC voltage depends on the current
consumed by the IC and the peripheral circuits as shown
by the formula:
VCC = VCC0 – RCCint × (IP – Irec)
VCC0 = VLN – RCC × ICC (see also Figs 5 and 6).
RCCint is the internal equivalent resistance of the voltage
supply, and Irec is the current consumed by the output
stage of the earpiece amplifier.
The DC line current flowing into the set is determined by
the exchange supply voltage (Vexch), the feeding bridge
resistance (Rexch), the DC resistance of the telephone line
(Rline) and the reference voltage (Vref). With line currents
below 7.5 mA, the internal reference voltage (generating
Vref) is automatically adjusted to a lower value. This means
that more sets can operate in parallel with DC line voltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.
handbook6, .h0alfpage
Vref
(V)
5.0
MGD176
4.0
3.0
104
(1)
(2)
105
106 107
RVA (Ω)
(1) Influence of RVA on Vref.
(2) Vref without influence of RVA.
Fig.4 Reference voltage adjustment by RVA.
1997 Apr 22
5
5 Page Philips Semiconductors
Low voltage versatile telephone
transmission circuit with dialler interface
Product specification
TEA1110A
CHARACTERISTICS
Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
Supplies (pins VLN, VCC, SLPE and REG)
Vref stabilized voltage between LN and
SLPE
VLN DC line voltage
VLN(exR)
∆VLN(T)
DC line voltage with an external
resistor RVA
DC line voltage variation with
temperature referred to 25 °C
Iline = 1 mA
Iline = 4 mA
Iline = 15 mA
Iline = 140 mA
RVA(SLPE−REG) = 27 kΩ
Tamb = −25 to +75 °C
ICC
VCC
RCCint
internal current consumption
VCC = 2.9 V
supply voltage for peripherals
IP = 0 mA
equivalent supply voltage resistance IP = 0.5 mA
Microphone amplifier (pins MIC+ and MIC−)
Zi input impedance
differential between pins
MIC+ and MIC−
Gvtx
∆Gvtx(f)
single-ended between pins
MIC+/MIC− and VEE
voltage gain from MIC+/MIC− to LN
gain variation with frequency
referred to 1 kHz
VMIC = 4 mV (RMS)
f = 300 to 3400 Hz
∆Gvtx(T)
gain variation with temperature
referred to 25 °C
Tamb = −25 to +75 °C
CMRR
common mode rejection ratio
VLN(max)(rms) maximum sending signal
(RMS value)
Vnotx
noise output voltage at pin LN; pins
MIC+/MIC− shorted through 200 Ω
Iline = 15 mA; THD = 2%
Iline = 4 mA, THD = 10%
psophometrically
weighted (P53 curve)
3.1
−
−
3.35
−
−
−
−
−
−
−
−
42.7
−
−
−
1.4
−
−
3.35 3.6
1.6 −
2.3 −
3.65 3.95
− 6.9
4.4 −
±30 −
1.1 1.4
2.9 −
550 620
64 −
32 −
43.7 44.7
±0.2 −
±0.3 −
80 −
1.7 −
0.8 −
−78.5 −
Receiving amplifier (pins IR, QR and GAR)
Zi
Gvrx
∆Gvrx(f)
input impedance
voltage gain from IR to QR
gain variation with frequency
referred to 1 kHz
∆Gvrx(T)
gain variation with temperature
referred to 25 °C
VIR = 4 mV (RMS)
f = 300 to 3400 Hz
Tamb = −25 to +75 °C
−
32
−
−
20 −
33 34
±0.2 −
±0.3 −
UNIT
V
V
V
V
V
V
mV
mA
V
Ω
kΩ
kΩ
dB
dB
dB
dB
V
V
dBmp
kΩ
dB
dB
dB
1997 Apr 22
11
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet TEA1110A.PDF ] |
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