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PDF TIP110 Data sheet ( Hoja de datos )
| Número de pieza | TIP110 | |
| Descripción | Plastic Medium-Power Complementary Silicon Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TIP110 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TIP110, TIP111, TIP112
(NPN); TIP115, TIP116,
TIP117 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 1.0 Adc
• Collector−Emitter Sustaining Voltage − @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115
= 80 Vdc (Min) − TIP111, TIP116
= 100 Vdc (Min) − TIP112, TIP117
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.5 Vdc (Max) @ IC
= 2.0 Adc
• Monolithic Construction with Built−in Base−Emitter Shunt Resistors
• Pb−Free Packages are Available*
www.onsemi.com
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 50 WATTS
MARKING
DIAGRAM
4
TO−220AB
CASE 221A
STYLE 1
TIP11xG
AYWW
12 3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
TIP11x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 8
1
Publication Order Number:
TIP110/D
1 page  
TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE−REGION SAFE−OPERATING AREA
10 10
4.0
1 ms
2.0 5 ms
TJ = 150°C
dc
1.0 BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
0.1
1.0
CURVES APPLY BELOW
RATED VCEO
TIP115
TIP116
TIP117
10 40 60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80 100
Figure 6. TIP115, 116, 117
4.0
2.0
TJ = 150°C
dc
1.0 BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
0.1
1.0
CURVES APPLY BELOW
RATED VCEO
10
TIP110
TIP111
TIP112
60 80 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. TIP110, 111, 112
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 6 and 7 is based on TJ(pk) = 150°C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
200
TC = 25°C
100
70
50
30
20
10
0.04 0.06 0.1
Cob
Cib
PNP
NPN
0.2 0.4 0.6 1.0 2.0 4.0 6.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
20
40
www.onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TIP110.PDF ] | |
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