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PDF TMP01 Data sheet ( Hoja de datos )
| Número de pieza | TMP01 | |
| Descripción | Low Power/ Programmable Temperature Controller | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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FEATURES
−55°C to +125°C (−67°F to +257°F) operation
±1.0°C accuracy over temperature (typ)
Temperature-proportional voltage output
User-programmable temperature trip points
User-programmable hysteresis
20 mA open-collector trip point outputs
TTL/CMOS compatible
Single-supply operation (4.5 V to 13.2 V)
PDIP, SOIC, and TO-99 packages
APPLICATIONS
Over/under temperature sensor and alarm
Board-level temperature sensing
Temperature controllers
Electronic thermostats
Thermal protection
HVAC systems
Industrial process control
Remote sensors
GENERAL DESCRIPTION
The TMP01 is a temperature sensor that generates a voltage
output proportional to absolute temperature and a control
signal from one of two outputs when the device is either above
or below a specific temperature range. Both the high/low
temperature trip points and hysteresis (overshoot) band are
determined by user-selected external resistors. For high volume
production, these resistors are available on board.
The TMP01 consists of a band gap voltage reference combined
with a pair of matched comparators. The reference provides
both a constant 2.5 V output and a voltage proportional to
absolute temperature (VPTAT) which has a precise temperature
coefficient of 5 mV/K and is 1.49 V (nominal) at 25°C. The
comparators compare VPTAT with the externally set tempera-
ture trip points and generate an open-collector output signal
when one of their respective thresholds has been exceeded.
Low Power Programmable
Temperature Controller
TMP01
FUNCTIONAL BLOCK DIAGRAM
TEMPERATURE
VREF 1
2.5V
SENSOR AND
VOLTAGE
SENSOR
8 V+
R1 REFERENCE
SET 2
HIGH
R2
SET 3
LOW
WINDOW
COMPARATOR
7 OVER
6 UNDER
R3
GND 4
HYSTERESIS
GENERATOR
5 VPTAT
TMP01
Figure 1.
Hysteresis is also programmed by the external resistor chain
and is determined by the total current drawn out of the 2.5 V
reference. This current is mirrored and used to generate a
hysteresis offset voltage of the appropriate polarity after a
comparator has been tripped. The comparators are connected
in parallel, which guarantees that there is no hysteresis overlap
and eliminates erratic transitions between adjacent trip zones.
The TMP01 utilizes proprietary thin-film resistors in conjunc-
tion with production laser trimming to maintain a temperature
accuracy of ±1°C (typical) over the rated temperature range,
with excellent linearity. The open-collector outputs are capable
of sinking 20 mA, enabling the TMP01 to drive control relays
directly. Operating from a 5 V supply, quiescent current is only
500 μA (max).
The TMP01 is available in 8-pin mini PDIP, SOIC, and TO-99
packages.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 ©1993–2009 Analog Devices, Inc. All rights reserved.
1 page  
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Maximum Supply Voltage
Maximum Input Voltage (SET HIGH, SET LOW)
Maximum Output Current (VREF, VPTAT)
Maximum Output Current (Open-Collector
Outputs)
Maximum Output Voltage (Open-Collector
Outputs)
Operating Temperature Range
Die Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering 60 sec)
Rating
−0.3 V to +15 V
−0.3 V to V+ +0.3 V
2 mA
50 mA
15 V
−55°C to +150°C
150°C
−65°C to +150°C
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
TMP01
Digital inputs and outputs are protected; however, permanent
damage may occur on unprotected units from high energy
electrostatic fields. Keep units in conductive foam or packaging
at all times until ready to use. Use proper antistatic handling
procedures.
Remove power before inserting or removing units from their
sockets.
Table 4.
Package Type
8-Lead PDIP (N-8)
8-Lead SOIC (R-8)
8-Pin TO-99 Can (H-08)
θJA
1031
1582
1501
θJC Unit
43 °C/W
43 °C/W
18 °C/W
1 θJA is specified for device in socket (worst-case conditions).
2 θJA is specified for device mounted on PCB.
ESD CAUTION
Rev. E | Page 5 of 20
5 Page 
TMP01
SWITCHING LOADS WITH THE OPEN-COLLECTOR
OUTPUTS
In many temperature sensing and control applications, some
type of switching is required. Whether it be to turn on a heater
when the temperature goes below a minimum value or to turn
off a motor that is overheating, the open-collector outputs
OVER and UNDER can be used. For the majority of
applications, the switches used need to handle large currents on
the order of 1 A and above. Because the TMP01 is accurately
measuring temperature, the open-collector outputs should
handle less than 20 mA of current to minimize self-heating.
The OVER and UNDER outputs should not drive the equip-
ment directly. Instead, an external switching device is required
to handle the large currents. Some examples of these are relays,
power MOSFETs, thyristors, IGBTs, and Darlingtons.
Figure 17 through Figure 21 show a variety of circuits where the
TMP01 controls a switch. The main consideration in these
circuits, such as the relay in Figure 17, is the current required to
activate the switch.
12V
TEMPERATURE
1
VREF
SENSOR AND
VOLTAGE
VPTAT
8
IN4001
R1
REFERENCE
OR EQUIV.
MOTOR
SHUTDOWN
27
R2 WINDOW
COMPARATOR
2604-12-311
COTO
36
R3
4
HYSTERESIS
GENERATOR
5
TMP01
Figure 17. Reed Relay Drive
It is important to check the particular relay to ensure that the
current needed to activate the coil does not exceed the TMP01’s
recommended output current of 20 mA. This is easily deter-
mined by dividing the relay coil voltage by the specified coil
resistance. Keep in mind that the inductance of the relay creates
large voltage spikes that can damage the TMP01 output unless
protected by a commutation diode across the coil, as shown.
The relay shown has a contact rating of 10 W maximum. If
a relay capable of handling more power is desired, the larger
contacts probably require a commensurately larger coil, with
lower coil resistance and thus higher trigger current. As the
contact power handling capability increases, so does the current
needed for the coil. In some cases, an external driving transistor
should be used to remove the current load on the TMP01.
Power FETs are popular for handling a variety of high current
dc loads. Figure 18 shows the TMP01 driving a p-channel
MOSFET transistor for a simple heater circuit. When the out-
put transistor turns on, the gate of the MOSFET is pulled down
to approximately 0.6 V, turning it on. For most MOSFETs, a
gate-to-source voltage, or Vgs, on the order of −2 V to −5 V
is sufficient to turn the device on.
Figure 19 shows a similar circuit for turning on an n-channel
MOSFET, except that now the gate to source voltage is positive.
For this reason, an external transistor must be used as an
inverter so that the MOSFET turns on when the UNDER
output pulls down.
TEMPERATURE
VREF
1
SENSOR AND
VOLTAGE
VPTAT
V+
8
2.4kΩ (12V)
R1 REFERENCE
1.2kΩ (6V)
2
R2
WINDOW
COMPARATOR
7 NC 5%
IRFR9024 +
OR EQUIV.
36
HEATING
R3 ELEMENT
4 HYSTERESIS
GENERATOR
5 NC
TMP01
NC = NO CONNECT
Figure 18. Driving a P-Channel MOSFET
TEMPERATURE
VREF
1
SENSOR AND
VOLTAGE
VPTAT
V+
8
R1 REFERENCE
4.7kΩ 4.7kΩ
2 7 NC
R2
3
WINDOW
COMPARATOR
6
2N1711
R3
4
HYSTERESIS
GENERATOR
5 NC
TMP01
HEATING
ELEMENT
IRF130
NC = NO CONNECT
Figure 19. Driving an N-Channel MOSFET
Isolated gate bipolar transistors (IGBT) combine many of the
benefits of power MOSFETs with bipolar transistors, and are
used for a variety of high power applications. Because IGBTs
have a gate similar to MOSFETs, turning on and off the devices
is relatively simple as shown in Figure 20.
The turn-on voltage for the IGBT shown (IRGBC40S) is
between 3.0 V and 5.5 V. This part has a continuous collector
current rating of 50 A and a maximum collector-to-emitter
voltage of 600 V, enabling it to work in very demanding
applications.
TEMPERATURE
1
VREF
SENSOR AND
VOLTAGE
VPTAT
V+
8
R1 REFERENCE
4.7kΩ 4.7kΩ
2 7 NC
R2
3
WINDOW
COMPARATOR
6
2N1711
R3
4 HYSTERESIS
GENERATOR
5 NC
TMP01
NC = NO CONNECT
Figure 20. Driving an IGBT
MOTOR
CONTROL
IRGBC40S
Rev. E | Page 11 of 20
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet TMP01.PDF ] | |
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