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What is UT8CR512K32-17VPC?

This electronic component, produced by the manufacturer "Aeroflex Circuit Technology", performs the same function as "UT8CR512K32 16 Megabit SRAM".


UT8CR512K32-17VPC Datasheet PDF - Aeroflex Circuit Technology

Part Number UT8CR512K32-17VPC
Description UT8CR512K32 16 Megabit SRAM
Manufacturers Aeroflex Circuit Technology 
Logo Aeroflex Circuit Technology Logo 


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Standard Products
UT8CR512K32 16 Megabit SRAM
Advanced Data Sheet
October 2004
www.aeroflex.com/4MSRAM
FEATURES
‰ 17ns maximum access time
‰ Asynchronous operation for compatibility with industry-
standard 512K x 8 SRAMs
‰ CMOS compatible inputs and output levels, three-state
bidirectional data bus
- I/O Voltage 3.3 volts, 1.8 volt core
‰ Radiation performance
- Intrinsic total-dose: 300 Krad(Si)
- SEL Immune >100 MeV-cm2/mg
- LETth (0.25): 53.0 MeV-cm2/mg
- Memory Cell Saturated Cross Section 1.67E-7cm2/bit
- Neutron Fluence: 3.0E14n/cm2
- Dose Rate
- Upset 1.0E9 rad(Si)/sec
- Latchup 1.0E11 rad(Si)/sec
‰ Packaging options:
- 68-lead ceramic quad flatpack (20.238 grams with lead
frame)
‰ Standard Microcircuit Drawing 5962-04227
- QML compliant part
INTRODUCTION
The UT8CR512K32 is a high-performance CMOS static RAM
multi-chip module (MCM), organized as four individual
524,288 words by 8 bit SRAMs with common output enable.
Easy memory expansion is provided by active LOW chip
enables (EN), an active LOW output enable (G), and three-state
drivers. This device has a power-down feature that reduces
power consumption by more than 90% when deselected.
Writing to each memory is accomplished by taking the
corresponding chip enable (En) input LOW and write enable
(Wn) input LOW. Data on the I/O pins is then written into the
location specified on the address pins (A0 through A18). Reading
from the device is accomplished by taking the chip enable (En)
and output enable (G) LOW while forcing write enable (Wn)
HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O pins.
The input/output pins are placed in a high impedance state when
the device is deselected (En HIGH), the outputs are disabled (G
HIGH), or during a write operation (En LOW and Wn LOW).
Perform 8, 16, 24 or 32 bit accesses by making Wn along with
En a common input to any combination of the discrete memory
die.
W3
E3
W2
E2
W1
E1
W0
E0
A(18:0)
G
512K x 8
512K x 8
512K x 8
512K x 8
DQ(31:24)
or
DQ3(7:0)
DQ(23:16)
or
DQ2(7:0)
DQ(15:8)
or
DQ1(7:0)
Figure 1. UT8CR512K32 SRAM Block Diagram
DQ(7:0)
or
DQ0(7:0)
1

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UT8CR512K32-17VPC equivalent
DC ELECTRICAL CHARACTERISTICS (Pre and Post-Radiation)*
(-55°C to +125°C for (C) screening and -40°C to 125°C for (W) screening)
SYMBOL
PARAMETER
CONDITION
VIH High-level input voltage
VIL Low-level input voltage
VOL1 Low-level output voltage
IOL = 8mA,VDD2 =VDD2 (min)
VOH1 High-level output voltage
IOH = -4mA,VDD2 =VDD2 (min)
CIN1 Input capacitance
ƒ = 1MHz @ 0V
CIO1 Bidirectional I/O capacitance ƒ = 1MHz @ 0V
IIN Input leakage current
VIN = VDD2 and VSS
IOZ Three-state output leakage VO = VDD2 and VSS, VDD2 = VDD2 (max)
current
G = VDD2 (max)
IOS2, 3
Short-circuit output current
VDD2 = VDD2 (max), VO = VDD2
VDD2 = VDD2 (max), VO = VSS
MIN
.7*VDD2
.8*VDD2
MAX
UNIT
V
.3*VDD2
.2*VDD2
V
V
V
12 pF
12 pF
-2 2 µA
-2 2 µA
-100 +100 mA
IDD1(OP1) Supply current operating
@ 1MHz
IDD1(OP2) Supply current operating
@66MHz
IDD2(OP1) Supply current operating
@ 1MHz
IDD2(OP2) Supply current operating
@66MHz
IDD1(SB)4
Supply current standby @
0Hz
IDD2(SB)4
IDD1(SB)4
Supply current standby
A(18:0) @ 66MHz
IDD2(SB)4
Inputs : VIL = VSS + 0.2V
VIH = VDD2 - 0.2V, IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
Inputs : VIL = VSS + 0.2V,
VIH = VDD2 - 0.2V, IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
Inputs : VIL = VSS + 0.2V
VIH = VDD2 - 0.2V, IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
Inputs : VIL = VSS + 0.2V,
VIH = VDD2 - 0.2V, IOUT = 0
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
CMOS inputs , IOUT = 0
EN = VDD2 -0.2
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
CMOS inputs , IOUT = 0
EN = VDD2 - 0.2
VDD1 = VDD1 (max), VDD2 = VDD2 (max)
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E5 rad(Si).
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. VIH = VDD2 (max), VIL = 0V.
45 mA
93 mA
243 µA
12 mA
38 mΑ
100 µA
38 mΑ
100 µA
5


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