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PDF UPG2106TB-E3 Data sheet ( Hoja de datos )
| Número de pieza | UPG2106TB-E3 | |
| Descripción | L-BAND PA DRIVER AMPLIFIER | |
| Fabricantes | NEC | |
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PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2106TB, µPG2110TB
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were
developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with
3.0 V, having the high gain and low distortion. The µPG2106TB is for 800 MHz band application, and the
µPG2110TB is for 1.5 GHz band application.
FEATURES
• Low operation voltage
: VDD1 = VDD2 = 3.0 V
• fRF
: 889 to 960 MHz, 1429 to 1453 MHz@Pout = +8 dBm
• Low distortion
: Padj1 = −60 dBc TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V
External input and output matching
• Low operation current
: IDD = 25 mA TYP. @VDD = 3.0 V, Pout = +8 dBm, VAGC = 2.5 V
External input and output matching
• Variable gain control function : ∆G = 40 dB TYP. @VAGC = 0.5 to 2.5 V
External input and output matching
• 6-pin super minimold package
APPLICATION
• Digital Cellular : PDC, IS-136 etc.
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
µPG2106TB-E3
µPG2110TB-E3
6-pin super minimold
Carrier tape width is 8 mm.
Qty 3 kp/reel.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order: µPG2106TB, µPG2110TB)
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Ratings
Supply Voltage
VDD1, VDD2
6.0
AGC Control Voltage
Input Power
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
VAGC
Pin
Ptot
TA
Tstg
6.0
−8
140Note
−30 to +90
−35 to +150
Note Mounted on a 50 × 50 × 1.6 mm double copper clad epoxy glass PWB, TA = +85 °C
Unit
V
V
dBm
mW
°C
°C
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14318EJ1V0DS00 (1st edition)
Date Published October 1999 N CP(K)
Printed in Japan
© 1999
1 page  
µPG2106TB, µPG2110TB
[µPG2106TB]
EVALUATION BOARD
Epoxy glass: ε = 4.6, t = 0.4 mm, Board Dimension: 38 × 40 mm
VDD1
C2
C1 L1 L2
C3
OUT
VDD2
C5
L4
C4
L3
IN
VAGC
R1
Preliminary Data Sheet P14318EJ1V0DS00
5
5 Page 
µPG2106TB, µPG2110TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Partial Heating
Soldering Conditions
Package peak temperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limit: NoneNote
Package peak temperature: 215 °C or below
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limit: NoneNote
Soldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limit: NoneNote
Pin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: NoneNote
Recommended Condition Symbol
IR35-00-3
VP15-00-3
WS60-00-1
–
Note After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Preliminary Data Sheet P14318EJ1V0DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPG2106TB-E3.PDF ] | |
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