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PDF VN0300L Data sheet ( Hoja de datos )
| Número de pieza | VN0300L | |
| Descripción | TMOS FET Transistor | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by VN0300L/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
VN0300L
Motorola Preferred Device
MAXIMUM RATINGS
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
Continuous Drain Current
Pulsed Drain Current
Power Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
60
60
V
V
VGS
VGSM
± 20
± 40
Vdc
Vpk
ID 200 mA
IDM 500 mA
PD 350 mW
2.8 mW/°C
Operating and Storage Temperature
THERMAL CHARACTERISTICS
TJ, Tstg
—
°C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10
seconds
RθJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
STATIC CHARACTERISTICS
Drain – Source Breakdown Voltage
(VDS = 0, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TA = 125°C)
Gate–Body Leakage
(VDS = 0, VGS = ±30 V)
V(BR)DSS
IDSS
IGSS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
On–State Drain Current(1)
(VDS = VGS, ID = 1.0 mA)
Drain–Source On Resistance(1)
(VGS = 5.0 V, ID = 0.3 A)
(VGS = 10 V, ID = 1.0 A)
Forward Transconductance(1)
(VDS = 10 V, ID = 0.5 A)
v1. Pulse Test; Pulse Width < 300 m s, Duty Cycle 2.0%.
VGS(th)
ID(on)
rDS(on)
gfs
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min Max Unit
30 —
V
µA
— 10
— 500
— ±100 nA
0.8 2.5
V
1.0 —
A
Ω
— 3.3
— 1.2
200 — mS
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet VN0300L.PDF ] | |
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