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Z0109NN2AL2 Datasheet PDF - STMicroelectronics

Part Number Z0109NN2AL2
Description 1A TRIACS
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 

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Z0109NN2AL2 datasheet, circuit
®
STANDARD
Z01 Series
1A TRIACS
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
1
600 to 800
3 to 25
Unit
A
V
mA
DESCRIPTION
The Z01 series is suitable for general purpose AC
switching applications. They can be found in
applications such as home appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
A2
G
A1
A1G A2
TO-92
(Z01xxA)
A1
A2
A2
SOT-223
(Z01xxN)
ABSOLUTE MAXIMUM RATINGS
Symbol
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
SOT-223
Ttab = 90°C
TO-92
F = 50 Hz
TI = 50°C
t = 20 ms
F = 60 Hz
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 20 µs
Tj = 125°C
Average gate power dissipation
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
Value
1
8
8.5
0.35
20
1
0.1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
A
W
°C
July 2003 - Ed: 5
1/7

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Z0109NN2AL2 equivalent
Z01 Series
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0 IGT
1.5
IH & IL
1.0
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140
ITSM(A)
9
8
7
6
5
4
3 Repetitive
Tamb=25°C
2
1
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
100.0
dI/dt limitation:
20A/µs
10.0
Tj initial=25°C
ITSM
1.0
0.1
0.01
tp (ms)
0.10 1.00
I²t
10.00
Fig. 7: On-state characteristics (maximum
values).
ITM(A)
10.0
1.0
Tj=Tj max.
Tj=25°C
Tj max.
Vto= 0.95 V
VTM(V)
Rd= 420 m
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Z0103
Z0107
(dV/dt)c (V/µs)
1.0
Z0109
Z0110
10.0
100.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj (°C)
0
0 25 50 75
100 125
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Information Total 7 Pages
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