Z0107 Datasheet PDF - NXP Semiconductors
Part Number | Z0107 | |
Description | Triacs | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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Triacs
Rev. 02 — 12 September 2002
Product data
1. Product profile
1.1 Description
Passivated triacs in conventional and surface mounting packages. Intended for use in
applications requiring high bidirectional transient and blocking voltage capability.
Available in a range of gate current sensitivities for optimum performance.
Product availability:
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA in SOT54B
Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN in SOT223.
1.2 Features
s Blocking voltage to 800 V (NA and NN s 1 A on-state RMS current.
types)
1.3 Applications
s Home appliances
s Fan controllers
s Small motor control
s Small loads in industrial process
control.
2. Pinning information
Table 1: Pinning - SOT54B (TO-92), SOT223, simplified outline and symbol
Pin Description
Simplified outline
1 terminal 2 (T2) SOT54B
2 gate (G)
(TO-92)
4
3 terminal 1 (T1)
1 terminal 1 (T1) SOT223
2 terminal 2 (T2)
3 gate (G)
4 terminal 2 (T2)
1
2
3
MSB033
1
Top view
23
MSB002 - 1
SOT54B (TO-92)
SOT223
Symbol
T2
G
T1 MBL300
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Philips Semiconductors
Z0103/07/09 series
Triacs
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
IGT gate trigger current VD = 12 V; RL = 30 Ω; T2+ G+; T2+ G−; T2− G−;
Z0103MA/MN/NA/NN Figure 9
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2− G+; Figure 9
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
IL latching current
VD = 12 V; RL = 30 Ω; T2+ G+; T2− G−; T2− G+;
Z0103MA/MN/NA/NN Figure 7
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Z0103MA/MN/NA/NN VD = 12 V; RL = 30 Ω; T2+ G−; Figure 7
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
IH holding current
IT = 50 mA; Figure 8
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
VT on-state voltage
VGT gate trigger voltage
ID off-state leakage current
Dynamic characteristics
Figure 6
VD = 12 V; RL = 30 Ω; Tj = 25 °C; Figure 11
VD = VDRM; RL = 3.3 kΩ; Tj = 125 °C; Figure 11
VD = VDRM(max); VR = VRRM(max); Tj = 125 °C
dVD/dt
critical rate of rise of
off-state voltage
VD = 0.67 VDRM(max); Tj = 110 °C; exponential
waveform; gate open; Figure 10
Z0103MA/MN/NA/NN
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
dVcom/dt
critical rate of change of
commutating voltage
Z0103MA/MN/NA/NN
VD = 400 V; IT = 1 A; Tj = 110 °C;
dIcom/dt = 0.44 A/ms; gate open
Z0107MA/MN/NA/NN
Z0109MA/MN/NA/NN
Min Typ Max Unit
- - 3 mA
- - 5 mA
- - 10 mA
- - 5 mA
- - 7 mA
- - 10 mA
- - 7 mA
- - 10 mA
- - 15 mA
- - 15 mA
- - 20 mA
- - 25 mA
- - 7 mA
- - 10 mA
- - 10 mA
- 1.3 1.6 V
- - 1.3 V
0.2 - - V
- - 500 µA
10 - - V/µs
20 - - V/µs
50 - - V/µs
0.5 - - V/µs
1 - - V/µs
2 - - V/µs
9397 750 10102
Product data
Rev. 02 — 12 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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