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PDF 2SD1705 Data sheet ( Hoja de datos )

Número de pieza 2SD1705
Descripción Silicon NPN epitaxial planar type
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SD1705 Hoja de datos, Descripción, Manual

Power Transistors
2SD1705
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1154
15.0±0.3
11.0±0.2
Unit: mm
5.0±0.2
(3.2)
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
Full-pack package which can be installed to the heat sink with one
screw
φ 3.2±0.1
2.0±0.2
1.1±0.1
2.0±0.1
0.6±0.2
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
130
80
7
10
20
70
3.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
5.45±0.3
10.9±0.5
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 3 A
VCE = 2 V, IC = 6 A
IC = 6 A, IB = 0.3 A
IC = 10 A, IB = 1 A
IC = 6 A, IB = 0.3 A
IC = 10 A, IB = 1 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 6 A, IB1 = 0.6 A, IB2 = − 0.6 A
VCC = 50 V
80 V
10 µA
50 µA
45
90 260
30
0.5 V
1.5
1.5 V
2.5
20 MHz
0.5 µs
2.0 µs
0.2 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: September 2003
SJD00210BED
1

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