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PDF 2SD1030 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1030 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q High emitter to base voltage VEBO.
q Low noise voltage NV.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
50
40
15
100
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1Z
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
VCB = 20V, IE = 0
100 nA
VCE = 20V, IB = 0
1 µA
IC = 10µA, IE = 0
50
V
IC = 1mA, IB = 0
40
V
IE = 10µA, IC = 0
15
V
VCE = 10V, IC = 2mA
400 1000 2000
IC = 10mA, IB = 1mA
0.05 0.2
V
VCB = 10V, IE = –2mA, f = 200MHz 120 MHz
*hFE Rank classification
Rank
hFE
Marking Symbol
R
400 ~ 800
1ZR
S
600 ~ 1200
1ZS
T
1000 ~ 2000
1ZT
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1030.PDF ] | |
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