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Datasheet 2SC4901 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SC4901 | NPN TRANSISTOR 2SC4901 高频低噪声宽带晶体管
北京鼎霖电子科技
2SC4901 NPN TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
1.简述：
本芯片采用硅外延工艺制造，具有高功率增益放大、宽带以及低噪声、低漏 电流、小结电容特性，较� |  TOP LINK | transistor |
| 2 | 2SC4901 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC4901
DESCRIPTION ·High Gain Bandwidth Product
fT = 9 GHz TYP. ·High gain, low noise figure
PG = 13.0 dB TYP., NF = 1.2 dB TYP. @ f = 900 MHz
APPLICATIONS ·Designed for VHF, UHF wide band amplifier.
ABSOLUTE M |  Inchange Semiconductor | transistor |
| 3 | 2SC4901 | Silicon NPN Epitaxial 2SC4901
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Features
• High gain bandwidth product fT = 9 GHz Typ • High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC4901
Absolute Maximum Ratings |  Hitachi Semiconductor | transistor |
| 4 | 2SC4901 | Silicon NPN Epitaxial Preliminary Datasheet
2SC4901
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
R07DS0276EJ0400 (Previous: REJ03G0733-0300) Rev.4.00 Mar 28, 2011
Features
High gain bandwidth product fT = 9 GHz Typ High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz
|  Renesas | transistor |
2SC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SC0108T2Dx-xx | Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core 2SC0108T2Dx-xx Preliminary
2SC0108T2Dx-xx Description & Application Manual
Dual Channel Ultra-compact Low-cost SCALE-2 Driver Core
Abstract
The new low-cost SCALE-2 dual-driver core 2SC0108T2Dx-xx combines unrivalled compactness with broad applicability. The driver was designed for universal applica  CT-Concept transistor | | |
| 2 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame  Panasonic Semiconductor transistor | | |
| 3 | 2SC0829 | Silicon NPN epitaxial planar type DataSheet.in
Transistors
2SC0829 (2SC829)
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0±0.2
Unit: mm
4.0±0.2
• Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios
0.7±0.1
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parame Panasonic Semiconductor transistor | | |
| 4 | 2SC100 | NPN Transistor w
w
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e e h
U 4 t
m o .c
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S a
e h
U 4 t e
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m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
 ETC transistor | | |
| 5 | 2SC1000 | (2SCxxx) Low Level and General Purpose Amplifiers w
w
w
.d
e e h s a t a
. u t4
m o c
 Micro Electronics transistor | | |
| 6 | 2SC1000 | Silicon NPN Epitaxial Transistor ETC transistor | | |
| 7 | 2SC1002 | Silicon NPN Power Transistors SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1002
DESCRIPTION ·With TO-66 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV video output applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and sym  SavantIC transistor | |
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