DataSheet39.com

What is FQP55N10?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "100V N-Channel MOSFET".


FQP55N10 Datasheet PDF - Fairchild Semiconductor

Part Number FQP55N10
Description 100V N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


There is a preview and FQP55N10 download ( pdf file ) link at the bottom of this page.





Total 9 Pages



Preview 1 page

No Preview Available ! FQP55N10 datasheet, circuit

FQP55N10
N-Channel QFET® MOSFET
100 V, 55 A, 26 mΩ
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
November 2013
Features
• 55 A, 100 V, RDS(on) = 26 mΩ (Max.) @ VGS = 10 V,
ID = 27.5 A
• Low Gate Charge (Typ. 75 nC)
• Low Crss (Typ. 130 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
GDS TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
G
S
FQP55N10
100
55
38.9
220
± 25
1100
55
15.5
6.0
155
1.03
-55 to +175
300
FQP55N10
0.97
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2000 Fairchild Semiconductor Corporation
FQP55N10 Rev. C1
1
www.fairchildsemi.com

line_dark_gray
FQP55N10 equivalent
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2000 Fairchild Semiconductor Corporation
FQP55N10 Rev. C1
5
www.fairchildsemi.com


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP55N10 electronic component.


Information Total 9 Pages
Link URL [ Copy URL to Clipboard ]
Download [ FQP55N10.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
FQP55N10The function is 100V N-Channel MOSFET. Fairchild SemiconductorFairchild Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

FQP5     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search