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What is FQP10N60C?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "600V N-Channel MOSFET".


FQP10N60C Datasheet PDF - Fairchild Semiconductor

Part Number FQP10N60C
Description 600V N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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November 2013
FQP10N60C / FQPF10N60C
N-Channel QFET® MOSFET
600 V, 9.5 A, 730 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology. This advanced technology has
been especially tailored to mini-mize on-state resistance,
provide superior switching perfor-mance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched
mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
Features
9.5 A, 600 V, RDS(on) = 730 m(Max.) @ VGS = 10 V,
ID = 4.75 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP10N60C FQPF10N60C
600
9.5 9.5 *
5.7 5.7 *
38 38 *
± 30
700
9.5
15.6
4.5
156 50
1.25 0.4
-55 to +150
300
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
1
www.fairchildsemi.com

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FQP10N60C equivalent
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP10N60C
100
D = 0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0.0 1
1 0 -5
* N o te s :
1 . Z (t) = 0 .8 °C /W M a x.
θJC
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM C
DM θJC
s in g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
Figure 11-2. Transient Thermal Response Curve for FQPF10N60C
D = 0 .5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
* N otes :
1 . Z (t) = 2 .5 °C /W M a x.
θJC
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM C
DM θJC
s in g le p u ls e
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
101
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
5
www.fairchildsemi.com


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FQP10N60C datasheet


1. 600V, 9.5A, N-Ch, MOSFET, Transistor

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