FQA85N06 Datasheet PDF - Fairchild Semiconductor
Part Number | FQA85N06 | |
Description | 60V N-Channel MOSFET | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
There is a preview and FQA85N06 download ( pdf file ) link at the bottom of this page. Total 8 Pages |
Preview 1 page No Preview Available ! FQA85N06
60V N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 100A, 60V, RDS(on) = 0.010Ω @VGS = 10 V
• Low gate charge ( typical 86 nC)
• Low Crss ( typical 165 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3P
FQA Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA85N06
60
100
71
350
± 25
815
100
21.4
7.0
214
1.43
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.70
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
|
|
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQA85N06 electronic component. |
Information | Total 8 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ FQA85N06.PDF Datasheet ] |
Share Link :
Electronic Components Distributor
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
Part Number | Description | MFRS |
FQA85N06 | The function is 60V N-Channel MOSFET. Fairchild Semiconductor | |
Semiconductors commonly used in industry:
1N4148 |  
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
FQA8
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA |