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What is FQA28N50F?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "500V N-Channel MOSFET".


FQA28N50F Datasheet PDF - Fairchild Semiconductor

Part Number FQA28N50F
Description 500V N-Channel MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FQA28N50F
500V N-Channel MOSFET
September 2001
FRFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
Features
• 28.4A, 500V, RDS(on) = 0.16@VGS = 10 V
• Low gate charge ( typical 110 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
G DS
TO-3P
FQA Series
D
!
"
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G!
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!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA28N50F
500
28.4
18
113.6
± 30
1300
28.4
31
17
310
2.5
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.4
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001

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FQA28N50F equivalent
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQA28N50F electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
FQA28N50The function is 500V N-Channel MOSFET. Fairchild SemiconductorFairchild Semiconductor
FQA28N50FThe function is 500V N-Channel MOSFET. Fairchild SemiconductorFairchild Semiconductor

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