M27C1001-10XC3X Datasheet PDF - STMicroelectronics
Part Number | M27C1001-10XC3X | |
Description | 1 Mbit 128Kb x8 UV EPROM and OTP EPROM | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and M27C1001-10XC3X download ( pdf file ) link at the bottom of this page. Total 17 Pages |
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1 Mbit (128Kb x8) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME: 35ns
s LOW POWER CONSUMPTION:
– Active Current 30mA at 5Mhz
– Standby Current 100µA
s PROGRAMMING VOLTAGE: 12.75V ± 0.25V
s PROGRAMMING TIME: 100µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 05h
DESCRIPTION
The M27C1001 is a 1 Mbit EPROM offered in the
two ranges UV (ultra violet erase) and OTP (one
time programmable). It is ideally suited for micro-
processor systems requiring large programs and
is organized as 131,072 words of 8 bits.
The FDIP32W (window ceramic frit-seal package)
and the LCCC32W (leadless chip carrier package)
have a transparent lids which allow the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written to the
device by following the programming procedure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C1001 is offered in PDIP32, PLCC32 and
TSOP32 (8 x 20 mm) packages.
32
1
FDIP32W (F)
32
1
PDIP32 (B)
LCCC32W (L)
PLCC32 (K)
Figure 1. Logic Diagram
TSOP32 (N)
8 x 20 mm
VCC VPP
17
A0-A16
8
Q0-Q7
P M27C1001
E
G
VSS
AI00710B
January 2000
1/17
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M27C1001
Table 7. Read Mode DC Characteristics (1)
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Symbol
Parameter
Test Condition
Min Max
ILI Input Leakage Current
ILO Output Leakage Current
ICC Supply Current
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
E = VIL, G = VIL,
IOUT = 0mA, f = 5MHz
±10
±10
30
ICC1 Supply Current (Standby) TTL
ICC2 Supply Current (Standby) CMOS
IPP Program Current
VIL Input Low Voltage
E = VIH
E > VCC – 0.2V
VPP = VCC
–0.3
1
100
10
0.8
VIH (2) Input High Voltage
2 VCC + 1
VOL Output Low Voltage
Output High Voltage TTL
VOH
Output High Voltage CMOS
IOL = 2.1mA
IOH = –400µA
IOH = –100µA
2.4
VCC – 0.7V
0.4
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Maximum DC voltage on Output is VCC +0.5V.
Unit
µA
µA
mA
mA
µA
µA
V
V
V
V
V
Table 8A. Read Mode AC Characteristics (1)
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M27C1001
Symbol Alt
Parameter
Test Condition -35 (3)
-45
-60
-70
Unit
Min Max Min Max Min Max Min Max
tAVQV
tACC
Address Valid to
Output Valid
E = VIL, G = VIL
35
45
60
70 ns
tELQV
tCE
Chip Enable Low to
Output Valid
G = VIL
35 45 60 70 ns
tGLQV
tOE
Output Enable Low
to Output Valid
E = VIL
25 25 30 35 ns
tEHQZ (2)
tDF
Chip Enable High to
Output Hi-Z
G = VIL
0 25 0 25 0 30 0 30 ns
tGHQZ (2)
tDF
Output Enable High
to Output Hi-Z
E = VIL
0 25 0 25 0 30 0 30 ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
0
0
0
0 ns
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
5/17
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