M27128A-1F1 Datasheet PDF - STMicroelectronics
Part Number | M27128A-1F1 | |
Description | NMOS 16K 2K x 8 UV EPROM | |
Manufacturers | STMicroelectronics | |
Logo | ||
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Preview 1 page No Preview Available ! M2716
NMOS 16K (2K x 8) UV EPROM
2048 x 8 ORGANIZATION
525mW Max ACTIVE POWER, 132mW Max
STANDBY POWER
ACCESS TIME:
– M2716-1 is 350ns
– M2716 is 450ns
SINGLE 5V SUPPLY VOLTAGE
STATIC-NO CLOCKS REQUIRED
INPUTS and OUTPUTS TTL COMPATIBLE
DURING BOTH READ and PROGRAM
MODES
THREE-STATE OUTPUT with TIED-OR-
CAPABILITY
EXTENDED TEMPERATURE RANGE
PROGRAMMING VOLTAGE: 25V
24
1
FDIP24W (F)
Figure 1. Logic Diagram
DESCRIPTION
The M2716 is a 16,384 bit UV erasable and elec-
trically programmable memory EPROM, ideally
suited for applications where fast turn around and
pattern experimentation are important require-
ments.
The M2716 is housed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Table 1. Signal Names
A0 - A10
Q0 - Q7
EP
G
VPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable / Program
Output Enable
Program Supply
Supply Voltage
Ground
VCC VPP
11
A0-A10
8
Q0-Q7
EP M2716
G
VSS
AI00784B
July 1994
1/9
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M2716
Table 6. Read Mode AC Characteristics (1)
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Symbol Alt
Parameter
Test Condition
M2716
-1 blank
Min Max Min Max
tAVQV tACC Address Valid to Output Valid
EP = VIL, G = VIL
350
450
tELQV
tCE Chip Enable Low to Output Valid
G = VIL
350 450
tGLQV
tEHQZ (2)
tGHQZ (2)
tOE Output Enable Low to Output Valid
tOD Chip Enable High to Output Hi-Z
tDF Output Enable High to Output Hi-Z
EP = VIL
G = VIL
EP = VIL
120 120
0 100 0 100
0 100 0 100
tAXQX
tOH Address Transition to Output Transition EP = VIL, G = VIL 0
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. Sampled only, not 100% tested.
0
Unit
ns
ns
ns
ns
ns
ns
Figure 5. Read Mode AC Waveforms
A0-A10
EP
G
Q0-Q7
tAVQV
VALID
tGLQV
tELQV
tAXQX
tEHQZ
tGHQZ
DATA OUT
Hi-Z
AI00786
Table 7. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 25V ± 1V)
Symbol
Parameter
Test Condition
Min
Max
ILI Input Leakage Current
VIL ≤ VIN ≤ VIH
±10
ICC Supply Current
100
IPP Program Current
5
IPP1 Program Current Pulse
EP = VIH Pulse
30
VIL Input Low Voltage
–0.1 0.8
VIH Input High Voltage
2 VCC + 1
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Unit
µA
mA
mA
mA
V
V
5/9
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Information | Total 9 Pages | |
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