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PDF FDZ7064S Data sheet ( Hoja de datos )
| Número de pieza | FDZ7064S | |
| Descripción | 30V N-Channel PowerTrench SyncFET BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2004
FDZ7064S
30V N-Channel PowerTrench SyncFETTM BGA MOSFET
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC power
supplies. Combining Fairchild’s 30V PowerTrench
SyncFET process with state of the art BGA packaging, the
FDZ7064S minimizes both PCB space and RDS(ON). This
BGA SyncFET embodies a breakthrough in both packaging
and power MOSFET integration which enables the device
to combine excellent thermal transfer characteristics, high
current handling capability, ultra-low profile packaging, low
gate charge, ultra-low reverse recovery charge and low
RDS(ON).
Applications
• DC/DC converters
• 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V
RDS(ON) = 9 mΩ @ VGS = 4.5 V
• Occupies only 14 mm2 of PCB area. Only 42% of the
area of SO-8
• Ultra-thin package: less than 0.8 mm height when
mounted to PCB
• 3.5 x 4 mm2 Footprint
• High power and current handling capability.
Pin 1
DDD D D D
DSSSSD
DSSSSD
DSSSSD
DGS S S D
Bottom
Pin 1
Top
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R¡£¢ ¤ Thermal Resistance, Junction-to-Ambient
R¡£¢ ¥ Thermal Resistance, Junction-to-Ball
R¡£¢ ¦ Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
7064S
Device
FDZ7064S
Reel Size
13”
Ratings
30
±16
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2004 Fairchild Semiconductor Corporation
FDZ7064S Rev. B2 (W)
1 page  
Typical Characteristics
SyncFET Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDZ7064S.
Figure 12. FDZ7064S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET .
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
0.01
0.001
TA = 125oC
TA = 100oC
0.0001
0.00001
0
TA = 25oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Figure 13. Non-SyncFET (FDZ7064N) body
diode reverse recovery characteristic.
FDZ7064S Rev B2 (W)
5 Page | ||
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| PDF Descargar | [ Datasheet FDZ7064S.PDF ] | |
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