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PDF FDZ209N Data sheet ( Hoja de datos )
| Número de pieza | FDZ209N | |
| Descripción | 60V N-Channel PowerTrench BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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May 2004
FDZ209N
60V N-Channel PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ209N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• Solenoid Drivers
Features
• 4 A, 60 V.
RDS(ON) = 80 mΩ @ VGS = 5 V
• Occupies only 5 mm2 of PCB area: only 55% of the
area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Index
slot
DDD
SSS
GSS
DDD
Bottom
Index
slot
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
209N
FDZ209N
7’’
D
G
S
Ratings
60
±20
4
20
2
–55 to +150
64
8
0.7
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ209N Rev B2 (W)
1 page  
Typical Characteristics
7
ID = 4A
6
5
4
3
2
1
0
02
VDS = 20V
40V
30V
46
Qg, GATE CHARGE (nC)
8
10
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
10ms
1ms
1
0.1
0.01
0.1
VGS = 5.0V
SINGLE PULSE
RθJA = 128oC/W
TA = 25oC
100ms
1s
10s
DC
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
800
600
CISS
f = 1MHz
VGS = 0 V
400
COSS
200
CRSS
0
0
10 20 30 40 50
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 128°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.001
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 128 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ209N Rev B2 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDZ209N.PDF ] | |
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