FDZ206P Datasheet PDF - Fairchild Semiconductor
Part Number | FDZ206P | |
Description | P-Channel 2.5V Specified PowerTrench | |
Manufacturers | Fairchild Semiconductor | |
Logo | ||
There is a preview and FDZ206P download ( pdf file ) link at the bottom of this page. Total 6 Pages |
Preview 1 page No Preview Available ! January 2003
FDZ206P
P-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ206P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –13 A, –20 V. RDS(ON) = 9.5 mΩ @ VGS = –4.5 V
RDS(ON) = 14.5 mΩ @ VGS = –2.5 V
• Occupies only 14 mm2 of PCB area.
Only 42% of the area of SO-8
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• 0.65 mm ball pitch
• 3.5 x 4 mm2 footprint
• High power and current handling capability
Pin 1
D DDD DD
D SSS SD
D SSS SD
D SSS SD
DGSS SD
Bottom
Pin 1
Top
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
206P
FDZ206P
13”
Ratings
–20
±12
–13
–60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2003 Fairchild Semiconductor Corporation
FDZ206P Rev. D1(W)
|
|
Typical Characteristics
5
ID = -13A
4
3
2
1
0
0 10
VDS = -5V
-10V
-15V
20 30
Qg, GATE CHARGE (nC)
40
50
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
0.1
0.01
0.01
VGS = -4.5V
SINGLE PULSE
RθJA = 119oC/W
TA = 25oC
0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
6000
5000
4000
CISS
f = 1MHz
VGS = 0 V
3000
2000
1000
CRSS
0
0
COSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 119°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 119 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1 1 10
t1, TIME (sec)
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1000
FDZ206P Rev. D1 (W)
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Information | Total 6 Pages | |
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