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What is FDZ204P?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "P-Channel 2.5V Specified PowerTrench".


FDZ204P Datasheet PDF - Fairchild Semiconductor

Part Number FDZ204P
Description P-Channel 2.5V Specified PowerTrench
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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March 2003
FDZ204P
P-Channel 2.5V Specified PowerTrench  BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ204P minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
Battery management
Load switch
Battery protection
DDD
S SS
G SS
Pin 1
Features
–4.5 A, –20 V. RDS(ON) = 45 m@ VGS = –4.5 V
RDS(ON) = 75 m@ VGS = –2.5 V
Occupies only 4 mm2 of PCB area.
Less than 40% of the area of a SSOT-6
Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Ultra-low Qg x RDS(ON) figure-of-merit.
High power and current handling capability.
S
G
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
204P
FDZ204P
7’’
D
Ratings
–20
±12
–4.5
–20
1.8
–55 to +150
67
11
1
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
3000 units
©2003 Fairchild Semiconductor Corporation
FDZ204P Rev. D2 (W)

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FDZ204P equivalent
Typical Characteristics
5
ID = -4.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1ms
10ms
100ms
1 1s
DC
VGS = -4.5V
0.1 SINGLE PULSE
RθJA = 155oC/W
TA = 25oC
0.01
0.1 1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1600
1200
800
CISS
f = 1MHz
VGS = 0 V
COSS
400
CRSS
0
0
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 155°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.001
SINGLE PULSE
0.01
0.1 1 10
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 155 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ204P Rev. D2 (W)


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