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What is FDS4559?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "60V Complementary PowerTrench MOSFET".


FDS4559 Datasheet PDF - Fairchild Semiconductor

Part Number FDS4559
Description 60V Complementary PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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April 2002
FDS4559
60V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
LCD backlight inverter
Features
Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 m@ VGS = 10V
RDS(on) = 75 m@ VGS = 4.5V
Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 m@ VGS = –10V
RDS(on) = 135 m@ VGS = –4.5V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4559
FDS4559
13”
Q1 Q2
60 –60
±20 ±20
4.5 –3.5
20 –20
2
1.6
1.2
1
-55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)

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FDS4559 equivalent
Typical Characteristics: Q2
10
ID = -3.0A
8
6
VDS = 10V
20V
30V
4
2
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
100µs
1
VGS = -10V
SINGLE PULSE
0.1 RθJA = 135oC/W
TA = 25oC
10ms
100ms
1s
10s
DC
0.01
0.1
1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1200
1000
800
600
C IS S
f = 1 MHz
VGS = 0 V
400
200
0
0
CRSS
COSS
10 20 30 40 50
-VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4559 Rev C1(W)


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
FDS4559The function is 60V Complementary PowerTrench MOSFET. Fairchild SemiconductorFairchild Semiconductor

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