2SK0301 Datasheet PDF - Panasonic Semiconductor
Part Number | 2SK0301 | |
Description | Silicon N-Channel Junction FET | |
Manufacturers | Panasonic Semiconductor | |
Logo | ||
There is a preview and 2SK0301 download ( pdf file ) link at the bottom of this page. Total 3 Pages |
Preview 1 page No Preview Available ! Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noies, high gain
G High gate to drain voltage VGDO
5.0±0.2
unit: mm
4.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
VDSX
VGDO
VGSO
ID
IG
PD
Tj
Tstg
55
−55
−55
±30
10
250
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
+0.2
0.45 –0.1
+0.2
0.45 –0.1
1.27 1.27
123
2.54±0.15
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92 Type Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 10V, VGS = 0
1 20 mA
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
IGSS
VGDC
VGSC
VGS = −30V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 10µA
−10
−55 −80
−5
nA
V
V
Mutual conductance
gm VDS = 10V, VGS = 0, f = 1kHz
2.5 7.5
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = 10V, VGS = 0, f = 1MHz
6.5 pF
1.9 pF
Noise figure
NF VDS = 10V, VGS = 0, Rg = 100kΩ 0.5 dB
f = 100Hz
* IDSS rank classification
Runk
P
IDSS (mA)
1 to 3
Q
2 to 6.5
R
5 to 12
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
247
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SK0301 electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 2SK0301.PDF Datasheet ] |
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