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PDF 2SJ356 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ356 | |
| Descripción | P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ356
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SJ356 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.95 Ω MAX. @VGS = –4 V, ID = –1.0 A
RDS(on) = 0.50 Ω MAX. @VGS = –10 V, ID = –1.0 A
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
D
SG
0.42
±0.06
1.5 0.47
±0.06
3.0
0.42
±0.06
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Source (S)
Marking: PR
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW ≤ 10 ms
Duty cycle ≤ 1 %
16 cm2 × 0.7 mm, ceramic substrate used
RATING
–60
–20/+10
±2.0
±4.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
Document No. D11218EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SJ356
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SJ356.PDF ] | |
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